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IMT3AT108 IMT3AT108 Rohm Semiconductor datasheet?p=IMT3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2PNP 50V 0.15A 6SMT
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT6
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39+ 0.45 EUR
100+ 0.23 EUR
500+ 0.2 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 28
IMX1T108 IMX1T108 Rohm Semiconductor emx1t2r-e.pdf Description: TRANS 2NPN 50V 0.15A 6SMT
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SMT6
Part Status: Not For New Designs
auf Bestellung 1190 Stücke:
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24+0.74 EUR
31+ 0.58 EUR
100+ 0.35 EUR
500+ 0.32 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 24
MMSTA13T146 MMSTA13T146 Rohm Semiconductor datasheet?p=MMSTA13&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 0.3A SOT-346 SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
auf Bestellung 2785 Stücke:
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35+ 0.52 EUR
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500+ 0.29 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 27
PTZTE2510A PTZTE2510A Rohm Semiconductor ptz_series_spec.pdf Description: DIODE ZENER 10V 1W PMDS
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDS
Part Status: Not For New Designs
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 7 V
Produkt ist nicht verfügbar
PTZTE2512A PTZTE2512A Rohm Semiconductor ptz_series_spec.pdf Description: DIODE ZENER 12V 1W PMDS
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
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Mindestbestellmenge: 14
PTZTE2513A PTZTE2513A Rohm Semiconductor ptz_series_spec.pdf Description: DIODE ZENER 13V 1W PMDS
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PTZTE2515A PTZTE2515A Rohm Semiconductor ptz_series_spec.pdf Description: DIODE ZENER 15V 1W PMDS
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 11 V
Produkt ist nicht verfügbar
PTZTE2516A PTZTE2516A Rohm Semiconductor ptz_series_spec.pdf Description: DIODE ZENER 16V 1W PMDS
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
Produkt ist nicht verfügbar
PTZTE2518A PTZTE2518A Rohm Semiconductor ptz_series_spec.pdf Description: DIODE ZENER 18V 1W PMDS
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
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PTZTE2520A PTZTE2520A Rohm Semiconductor ptz_series_spec.pdf Description: DIODE ZENER 20V 1W PMDS
auf Bestellung 1100 Stücke:
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21+0.84 EUR
25+ 0.73 EUR
100+ 0.54 EUR
500+ 0.43 EUR
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PTZTE2522A PTZTE2522A Rohm Semiconductor ptz_series_spec.pdf Description: DIODE ZENER 22V 1W PMDS
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PTZTE2524A PTZTE2524A Rohm Semiconductor ptz_series_spec.pdf Description: DIODE ZENER 24V 1W PMDS
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PTZTE2527A PTZTE2527A Rohm Semiconductor ptz_series_spec.pdf Description: DIODE ZENER 27V 1W PMDS
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PTZTE2533A PTZTE2533A Rohm Semiconductor ptz_series_spec.pdf Description: DIODE ZENER 33V 1W PMDS
Produkt ist nicht verfügbar
PTZTE2536A PTZTE2536A Rohm Semiconductor ptz_series_spec.pdf Description: DIODE ZENER 36V 1W PMDS
auf Bestellung 1275 Stücke:
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PTZTE2539A PTZTE2539A Rohm Semiconductor ptz_series_spec.pdf Description: DIODE ZENER 39V 1W PMDS
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PTZTE253.6B PTZTE253.6B Rohm Semiconductor ptz3.6b.pdf Description: DIODE ZENER 3.8V 1W PMDS
auf Bestellung 6187 Stücke:
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PTZTE2543A PTZTE2543A Rohm Semiconductor ptz_series_spec.pdf Description: DIODE ZENER 43V 1W PMDS
Produkt ist nicht verfügbar
PTZTE254.7B PTZTE254.7B Rohm Semiconductor ptz_series.pdf Description: DIODE ZENER 4.9V 1W PMDS
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 4.9 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Produkt ist nicht verfügbar
PTZTE255.1A PTZTE255.1A Rohm Semiconductor ptz_series_spec.pdf Description: DIODE ZENER 5.1V 1W PMDS
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PTZTE255.6A PTZTE255.6A Rohm Semiconductor ptz_series_spec.pdf Description: DIODE ZENER 5.6V 1W PMDS
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PTZTE256.2A PTZTE256.2A Rohm Semiconductor ptz_series_spec.pdf Description: DIODE ZENER 6.2V 1W PMDS
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PTZTE256.8A PTZTE256.8A Rohm Semiconductor ptz_series_spec.pdf Description: DIODE ZENER 6.8V 1W PMDS
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PTZTE257.5A PTZTE257.5A Rohm Semiconductor ptz_series_spec.pdf Description: DIODE ZENER 7.5V 1W PMDS
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PTZTE258.2A PTZTE258.2A Rohm Semiconductor ptz_series_spec.pdf Description: DIODE ZENER 8.2V 1W PMDS
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PTZTE259.1B PTZTE259.1B Rohm Semiconductor ptz_series.pdf Description: DIODE ZENER 9.8V 1W PMDS
Produkt ist nicht verfügbar
QSH29TR QSH29TR Rohm Semiconductor datasheet?p=QSH29&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2NPN PREBIAS 1.25W TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 100mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 200mA, 5V
Resistor - Base (R1): 10kOhms
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
auf Bestellung 3000 Stücke:
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13+1.41 EUR
15+ 1.22 EUR
100+ 0.84 EUR
500+ 0.7 EUR
1000+ 0.6 EUR
Mindestbestellmenge: 13
QSZ2TR QSZ2TR Rohm Semiconductor TSMT5_TR_taping.pdf Description: TRANS NPN/PNP 30V 1.5A 5TSMT
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: NPN, PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 370mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 300MHz, 280MHz
Supplier Device Package: TSMT5
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500+ 0.48 EUR
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QSZ4TR QSZ4TR Rohm Semiconductor qsz4.pdf Description: TRANS NPN/PNP 30V 2A 5TSMT
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RB160L-90TE25 RB160L-90TE25 Rohm Semiconductor Description: DIODE SCHOTTKY 90V 1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
RB162VA-20TR RB162VA-20TR Rohm Semiconductor rb162va-20.pdf Description: DIODE SCHOTTKY 20V 1A TUMD2
Produkt ist nicht verfügbar
RB411VA-50TR RB411VA-50TR Rohm Semiconductor datasheet?p=RB411VA-50&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 20V 500MA TUMD2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: TUMD2
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Produkt ist nicht verfügbar
RB450FT106 RB450FT106 Rohm Semiconductor datasheet?p=RB450F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 100MA UMD3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD3
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
auf Bestellung 3689 Stücke:
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22+0.83 EUR
28+ 0.64 EUR
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500+ 0.36 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 22
RB496EATR RB496EATR Rohm Semiconductor datasheet?p=RB496EA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 20V 1A TSMD5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1A
Supplier Device Package: TSMD5
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 10 V
auf Bestellung 8155 Stücke:
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22+ 0.84 EUR
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500+ 0.46 EUR
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Mindestbestellmenge: 18
RB520SM-40T2R RB520SM-40T2R Rohm Semiconductor datasheet?p=RB520SM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 200MA EMD2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
auf Bestellung 44811 Stücke:
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34+0.53 EUR
56+ 0.32 EUR
100+ 0.2 EUR
500+ 0.15 EUR
1000+ 0.13 EUR
2000+ 0.12 EUR
Mindestbestellmenge: 34
RB551V-30TE-17 RB551V-30TE-17 Rohm Semiconductor datasheet?p=RB551V-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 20V 500MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
auf Bestellung 1363 Stücke:
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24+0.74 EUR
34+ 0.53 EUR
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500+ 0.24 EUR
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Mindestbestellmenge: 24
RF051VA2STR RF051VA2STR Rohm Semiconductor datasheet?p=RF051VA2S&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: DIODE GEN PURP 200V 500MA TUMD2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: TUMD2
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 1 Stücke:
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RF073M2STR RF073M2STR Rohm Semiconductor RF073M2S.pdf Description: DIODE GEN PURP 200V 700MA PMDU
auf Bestellung 7083 Stücke:
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RF103L2STE25 RF103L2STE25 Rohm Semiconductor RF103L2S.pdf Description: DIODE GEN PURP 200V 1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
RN739DT146 RN739DT146 Rohm Semiconductor rn739F_D.pdf Description: DIODE PIN HF SW 50V 50MA SOT-346
auf Bestellung 2969 Stücke:
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RPM841-H11E2A RPM841-H11E2A Rohm Semiconductor Description: MODULE IRDA 115.2KBPS 7-SMD
Packaging: Cut Tape (CT)
Orientation: Side View
Operating Temperature: -30°C ~ 85°C
Size: 6.8mm x 2.4mm x 1.5mm
Data Rate: 115.2kbs (SIR)
Standards: IrDA 1.2
Link Range, Low Power: 20cm, 60cm
Voltage - Supply: 2.4 V ~ 3.6 V
Idle Current, Typ @ 25°C: 90 µA
Produkt ist nicht verfügbar
RPM872-H14E2A RPM872-H14E2A Rohm Semiconductor RPM872-H14.pdf Description: MODULE IRDA 115.2KBPS 8SMD
Produkt ist nicht verfügbar
RQ1E050RPTR RQ1E050RPTR Rohm Semiconductor datasheet?p=RQ1E050RP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
auf Bestellung 1731 Stücke:
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500+ 0.8 EUR
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RRR015P03TL RRR015P03TL Rohm Semiconductor RRR015P03.pdf Description: MOSFET P-CH 30V 1.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
auf Bestellung 7692 Stücke:
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RRR040P03TL RRR040P03TL Rohm Semiconductor Description: MOSFET P-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Produkt ist nicht verfügbar
RSR020N06TL RSR020N06TL Rohm Semiconductor rsr020n06-e.pdf Description: MOSFET N-CH 60V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
auf Bestellung 5390 Stücke:
Lieferzeit 10-14 Tag (e)
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21+ 0.87 EUR
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500+ 0.43 EUR
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Mindestbestellmenge: 13
RW1A020ZPT2R RW1A020ZPT2R Rohm Semiconductor datasheet?p=RW1A020ZP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 12V 2A WEMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-WEMT
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V
auf Bestellung 6720 Stücke:
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24+ 0.76 EUR
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500+ 0.41 EUR
1000+ 0.33 EUR
2000+ 0.3 EUR
Mindestbestellmenge: 20
RZF020P01TL RZF020P01TL Rohm Semiconductor datasheet?p=RZF020P01&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 12V 2A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V
auf Bestellung 9710 Stücke:
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34+ 0.53 EUR
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500+ 0.29 EUR
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Mindestbestellmenge: 28
RZR020P01TL RZR020P01TL Rohm Semiconductor Description: MOSFET P-CH 12V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V
auf Bestellung 7411 Stücke:
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26+ 0.7 EUR
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500+ 0.38 EUR
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SST3904T116 SST3904T116 Rohm Semiconductor datasheet?p=SST3904&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 40V 0.2A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
auf Bestellung 28376 Stücke:
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34+0.53 EUR
48+ 0.37 EUR
100+ 0.19 EUR
500+ 0.15 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 34
SST3906T116 SST3906T116 Rohm Semiconductor datasheet?p=SST3906&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 40V 0.2A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
auf Bestellung 22427 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.4 EUR
70+ 0.25 EUR
113+ 0.16 EUR
500+ 0.11 EUR
1000+ 0.1 EUR
Mindestbestellmenge: 44
STZ6.8TT146 STZ6.8TT146 Rohm Semiconductor stz6.8t.pdf Description: DIODE ZENER ARRAY 6.8V SMD3
auf Bestellung 2678 Stücke:
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TDZTR10 TDZTR10 Rohm Semiconductor tdz10.pdf Description: DIODE ZENER 10V 500MW TUMD2
auf Bestellung 1413 Stücke:
Lieferzeit 10-14 Tag (e)
TDZTR11 TDZTR11 Rohm Semiconductor tdz10.pdf Description: DIODE ZENER 11V 500MW TUMD2
auf Bestellung 2377 Stücke:
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TDZTR12 TDZTR12 Rohm Semiconductor tdz10.pdf Description: DIODE ZENER 12V 500MW TUMD2
auf Bestellung 5981 Stücke:
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TDZTR13 TDZTR13 Rohm Semiconductor tdz10.pdf Description: DIODE ZENER 13V 500MW TUMD2
auf Bestellung 1649 Stücke:
Lieferzeit 10-14 Tag (e)
TDZTR15 TDZTR15 Rohm Semiconductor tdz10.pdf Description: DIODE ZENER 15V 500MW TUMD2
auf Bestellung 4584 Stücke:
Lieferzeit 10-14 Tag (e)
TDZTR16 TDZTR16 Rohm Semiconductor tdz10.pdf Description: DIODE ZENER 16V 500MW TUMD2
auf Bestellung 8541 Stücke:
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TDZTR18 TDZTR18 Rohm Semiconductor tdz10.pdf Description: DIODE ZENER 18V 500MW TUMD2
auf Bestellung 1922 Stücke:
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TDZTR20 TDZTR20 Rohm Semiconductor tdz10.pdf Description: DIODE ZENER 20V 500MW TUMD2
auf Bestellung 1916 Stücke:
Lieferzeit 10-14 Tag (e)
IMT3AT108 datasheet?p=IMT3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
IMT3AT108
Hersteller: Rohm Semiconductor
Description: TRANS 2PNP 50V 0.15A 6SMT
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT6
auf Bestellung 1169 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.63 EUR
39+ 0.45 EUR
100+ 0.23 EUR
500+ 0.2 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 28
IMX1T108 emx1t2r-e.pdf
IMX1T108
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN 50V 0.15A 6SMT
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SMT6
Part Status: Not For New Designs
auf Bestellung 1190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
31+ 0.58 EUR
100+ 0.35 EUR
500+ 0.32 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 24
MMSTA13T146 datasheet?p=MMSTA13&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
MMSTA13T146
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 0.3A SOT-346 SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
auf Bestellung 2785 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
35+ 0.52 EUR
100+ 0.31 EUR
500+ 0.29 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 27
PTZTE2510A ptz_series_spec.pdf
PTZTE2510A
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 10V 1W PMDS
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDS
Part Status: Not For New Designs
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 7 V
Produkt ist nicht verfügbar
PTZTE2512A ptz_series_spec.pdf
PTZTE2512A
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 12V 1W PMDS
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
auf Bestellung 489 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.28 EUR
23+ 0.8 EUR
100+ 0.51 EUR
Mindestbestellmenge: 14
PTZTE2513A ptz_series_spec.pdf
PTZTE2513A
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 13V 1W PMDS
auf Bestellung 372 Stücke:
Lieferzeit 10-14 Tag (e)
PTZTE2515A ptz_series_spec.pdf
PTZTE2515A
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 15V 1W PMDS
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 11 V
Produkt ist nicht verfügbar
PTZTE2516A ptz_series_spec.pdf
PTZTE2516A
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 16V 1W PMDS
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
Produkt ist nicht verfügbar
PTZTE2518A ptz_series_spec.pdf
PTZTE2518A
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 18V 1W PMDS
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.84 EUR
25+ 0.73 EUR
100+ 0.5 EUR
500+ 0.39 EUR
Mindestbestellmenge: 21
PTZTE2520A ptz_series_spec.pdf
PTZTE2520A
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 20V 1W PMDS
auf Bestellung 1100 Stücke:
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Anzahl Preis ohne MwSt
21+0.84 EUR
25+ 0.73 EUR
100+ 0.54 EUR
500+ 0.43 EUR
Mindestbestellmenge: 21
PTZTE2522A ptz_series_spec.pdf
PTZTE2522A
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 22V 1W PMDS
auf Bestellung 1446 Stücke:
Lieferzeit 10-14 Tag (e)
PTZTE2524A ptz_series_spec.pdf
PTZTE2524A
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 24V 1W PMDS
auf Bestellung 1469 Stücke:
Lieferzeit 10-14 Tag (e)
PTZTE2527A ptz_series_spec.pdf
PTZTE2527A
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 27V 1W PMDS
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
PTZTE2533A ptz_series_spec.pdf
PTZTE2533A
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 33V 1W PMDS
Produkt ist nicht verfügbar
PTZTE2536A ptz_series_spec.pdf
PTZTE2536A
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 36V 1W PMDS
auf Bestellung 1275 Stücke:
Lieferzeit 10-14 Tag (e)
PTZTE2539A ptz_series_spec.pdf
PTZTE2539A
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 39V 1W PMDS
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
PTZTE253.6B ptz3.6b.pdf
PTZTE253.6B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 3.8V 1W PMDS
auf Bestellung 6187 Stücke:
Lieferzeit 10-14 Tag (e)
PTZTE2543A ptz_series_spec.pdf
PTZTE2543A
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 43V 1W PMDS
Produkt ist nicht verfügbar
PTZTE254.7B ptz_series.pdf
PTZTE254.7B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 4.9V 1W PMDS
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 4.9 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Produkt ist nicht verfügbar
PTZTE255.1A ptz_series_spec.pdf
PTZTE255.1A
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.1V 1W PMDS
auf Bestellung 1399 Stücke:
Lieferzeit 10-14 Tag (e)
PTZTE255.6A ptz_series_spec.pdf
PTZTE255.6A
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.6V 1W PMDS
auf Bestellung 3290 Stücke:
Lieferzeit 10-14 Tag (e)
PTZTE256.2A ptz_series_spec.pdf
PTZTE256.2A
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.2V 1W PMDS
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
PTZTE256.8A ptz_series_spec.pdf
PTZTE256.8A
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.8V 1W PMDS
auf Bestellung 388 Stücke:
Lieferzeit 10-14 Tag (e)
PTZTE257.5A ptz_series_spec.pdf
PTZTE257.5A
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 7.5V 1W PMDS
auf Bestellung 741 Stücke:
Lieferzeit 10-14 Tag (e)
PTZTE258.2A ptz_series_spec.pdf
PTZTE258.2A
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 8.2V 1W PMDS
auf Bestellung 2960 Stücke:
Lieferzeit 10-14 Tag (e)
PTZTE259.1B ptz_series.pdf
PTZTE259.1B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 9.8V 1W PMDS
Produkt ist nicht verfügbar
QSH29TR datasheet?p=QSH29&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QSH29TR
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 1.25W TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 100mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 200mA, 5V
Resistor - Base (R1): 10kOhms
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.41 EUR
15+ 1.22 EUR
100+ 0.84 EUR
500+ 0.7 EUR
1000+ 0.6 EUR
Mindestbestellmenge: 13
QSZ2TR TSMT5_TR_taping.pdf
QSZ2TR
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP 30V 1.5A 5TSMT
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: NPN, PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 370mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 300MHz, 280MHz
Supplier Device Package: TSMT5
auf Bestellung 2473 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.95 EUR
22+ 0.81 EUR
100+ 0.61 EUR
500+ 0.48 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 19
QSZ4TR qsz4.pdf
QSZ4TR
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP 30V 2A 5TSMT
auf Bestellung 1670 Stücke:
Lieferzeit 10-14 Tag (e)
RB160L-90TE25
RB160L-90TE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 90V 1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
RB162VA-20TR rb162va-20.pdf
RB162VA-20TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 1A TUMD2
Produkt ist nicht verfügbar
RB411VA-50TR datasheet?p=RB411VA-50&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB411VA-50TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 500MA TUMD2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: TUMD2
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Produkt ist nicht verfügbar
RB450FT106 datasheet?p=RB450F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB450FT106
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MA UMD3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD3
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
auf Bestellung 3689 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.83 EUR
28+ 0.64 EUR
100+ 0.39 EUR
500+ 0.36 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 22
RB496EATR datasheet?p=RB496EA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB496EATR
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 20V 1A TSMD5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1A
Supplier Device Package: TSMD5
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 10 V
auf Bestellung 8155 Stücke:
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18+0.99 EUR
22+ 0.84 EUR
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RB520SM-40T2R datasheet?p=RB520SM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB520SM-40T2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA EMD2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
auf Bestellung 44811 Stücke:
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34+0.53 EUR
56+ 0.32 EUR
100+ 0.2 EUR
500+ 0.15 EUR
1000+ 0.13 EUR
2000+ 0.12 EUR
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RB551V-30TE-17 datasheet?p=RB551V-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB551V-30TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 500MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
auf Bestellung 1363 Stücke:
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24+0.74 EUR
34+ 0.53 EUR
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Mindestbestellmenge: 24
RF051VA2STR datasheet?p=RF051VA2S&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
RF051VA2STR
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 200V 500MA TUMD2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: TUMD2
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 1 Stücke:
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RF073M2STR RF073M2S.pdf
RF073M2STR
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 200V 700MA PMDU
auf Bestellung 7083 Stücke:
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RF103L2STE25 RF103L2S.pdf
RF103L2STE25
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 200V 1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
RN739DT146 rn739F_D.pdf
RN739DT146
Hersteller: Rohm Semiconductor
Description: DIODE PIN HF SW 50V 50MA SOT-346
auf Bestellung 2969 Stücke:
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RPM841-H11E2A
RPM841-H11E2A
Hersteller: Rohm Semiconductor
Description: MODULE IRDA 115.2KBPS 7-SMD
Packaging: Cut Tape (CT)
Orientation: Side View
Operating Temperature: -30°C ~ 85°C
Size: 6.8mm x 2.4mm x 1.5mm
Data Rate: 115.2kbs (SIR)
Standards: IrDA 1.2
Link Range, Low Power: 20cm, 60cm
Voltage - Supply: 2.4 V ~ 3.6 V
Idle Current, Typ @ 25°C: 90 µA
Produkt ist nicht verfügbar
RPM872-H14E2A RPM872-H14.pdf
RPM872-H14E2A
Hersteller: Rohm Semiconductor
Description: MODULE IRDA 115.2KBPS 8SMD
Produkt ist nicht verfügbar
RQ1E050RPTR datasheet?p=RQ1E050RP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ1E050RPTR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
auf Bestellung 1731 Stücke:
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13+1.39 EUR
15+ 1.24 EUR
100+ 0.97 EUR
500+ 0.8 EUR
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RRR015P03TL RRR015P03.pdf
RRR015P03TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 1.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
auf Bestellung 7692 Stücke:
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Anzahl Preis ohne MwSt
23+0.77 EUR
27+ 0.66 EUR
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RRR040P03TL
RRR040P03TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Produkt ist nicht verfügbar
RSR020N06TL rsr020n06-e.pdf
RSR020N06TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
auf Bestellung 5390 Stücke:
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Anzahl Preis ohne MwSt
13+1.39 EUR
21+ 0.87 EUR
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RW1A020ZPT2R datasheet?p=RW1A020ZP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RW1A020ZPT2R
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 2A WEMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-WEMT
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V
auf Bestellung 6720 Stücke:
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20+0.9 EUR
24+ 0.76 EUR
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RZF020P01TL datasheet?p=RZF020P01&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RZF020P01TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 2A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V
auf Bestellung 9710 Stücke:
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28+0.63 EUR
34+ 0.53 EUR
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RZR020P01TL
RZR020P01TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V
auf Bestellung 7411 Stücke:
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22+0.83 EUR
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SST3904T116 datasheet?p=SST3904&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SST3904T116
Hersteller: Rohm Semiconductor
Description: TRANS NPN 40V 0.2A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
auf Bestellung 28376 Stücke:
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34+0.53 EUR
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SST3906T116 datasheet?p=SST3906&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SST3906T116
Hersteller: Rohm Semiconductor
Description: TRANS PNP 40V 0.2A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
auf Bestellung 22427 Stücke:
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Anzahl Preis ohne MwSt
44+0.4 EUR
70+ 0.25 EUR
113+ 0.16 EUR
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1000+ 0.1 EUR
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STZ6.8TT146 stz6.8t.pdf
STZ6.8TT146
Hersteller: Rohm Semiconductor
Description: DIODE ZENER ARRAY 6.8V SMD3
auf Bestellung 2678 Stücke:
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TDZTR10 tdz10.pdf
TDZTR10
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 10V 500MW TUMD2
auf Bestellung 1413 Stücke:
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TDZTR11 tdz10.pdf
TDZTR11
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 11V 500MW TUMD2
auf Bestellung 2377 Stücke:
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TDZTR12 tdz10.pdf
TDZTR12
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 12V 500MW TUMD2
auf Bestellung 5981 Stücke:
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TDZTR13 tdz10.pdf
TDZTR13
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 13V 500MW TUMD2
auf Bestellung 1649 Stücke:
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TDZTR15 tdz10.pdf
TDZTR15
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 15V 500MW TUMD2
auf Bestellung 4584 Stücke:
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TDZTR16 tdz10.pdf
TDZTR16
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 16V 500MW TUMD2
auf Bestellung 8541 Stücke:
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TDZTR18 tdz10.pdf
TDZTR18
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 18V 500MW TUMD2
auf Bestellung 1922 Stücke:
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TDZTR20 tdz10.pdf
TDZTR20
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 20V 500MW TUMD2
auf Bestellung 1916 Stücke:
Lieferzeit 10-14 Tag (e)
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