Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (100326) > Seite 433 nach 1673
Foto | Bezeichnung | Hersteller | Beschreibung |
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PSL0102WBEB1 | Rohm Semiconductor | Description: LED PSL0102 COOL WHT 5000K 2SMD |
auf Bestellung 1927 Stücke: Lieferzeit 10-14 Tag (e) |
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BZ6A1206GM_EVK | Rohm Semiconductor | Description: BOARD EVAL BUCK 1.2V BZ6A1206 |
Produkt ist nicht verfügbar |
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BD88415GUL-E2 | Rohm Semiconductor | Description: IC HEADPHONE AMP 2-CH 14CSP |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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BD88415GUL-E2 | Rohm Semiconductor | Description: IC HEADPHONE AMP 2-CH 14CSP |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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BD88415GUL-E2 | Rohm Semiconductor | Description: IC HEADPHONE AMP 2-CH 14CSP |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RMW130N03TB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 13A 8PSOP Packaging: Tape & Reel (TR) Part Status: Obsolete |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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RMW200N03TB | Rohm Semiconductor | Description: MOSFET N-CH 30V 20A 8PSOP |
Produkt ist nicht verfügbar |
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RMW280N03TB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 28A 8PSOP Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 28A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-PSOP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 15 V |
Produkt ist nicht verfügbar |
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RMW130N03TB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 13A 8PSOP Packaging: Cut Tape (CT) Part Status: Obsolete |
auf Bestellung 4815 Stücke: Lieferzeit 10-14 Tag (e) |
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RMW150N03TB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 15A 8PSOP Packaging: Cut Tape (CT) Part Status: Obsolete |
auf Bestellung 1738 Stücke: Lieferzeit 10-14 Tag (e) |
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RMW180N03TB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 18A 8PSOP Packaging: Cut Tape (CT) Part Status: Obsolete |
auf Bestellung 2415 Stücke: Lieferzeit 10-14 Tag (e) |
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RMW200N03TB | Rohm Semiconductor | Description: MOSFET N-CH 30V 20A 8PSOP |
auf Bestellung 2210 Stücke: Lieferzeit 10-14 Tag (e) |
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R5009FNX | Rohm Semiconductor | Description: MOSFET N-CH 500V 9A TO220FM |
auf Bestellung 130 Stücke: Lieferzeit 10-14 Tag (e) |
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R5011FNX | Rohm Semiconductor |
Description: MOSFET N-CH 500V 11A TO-220FM Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 5.4A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 5.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V |
auf Bestellung 418 Stücke: Lieferzeit 10-14 Tag (e) |
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R5016FNX | Rohm Semiconductor | Description: MOSFET N-CH 500V 16A TO-220FM |
auf Bestellung 568 Stücke: Lieferzeit 10-14 Tag (e) |
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R6008FNX | Rohm Semiconductor | Description: MOSFET N-CH 600V 8A TO-220FM |
auf Bestellung 777 Stücke: Lieferzeit 10-14 Tag (e) |
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R6012FNX | Rohm Semiconductor | Description: MOSFET N-CH 600V 12A TO220FM |
Produkt ist nicht verfügbar |
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R6015FNX | Rohm Semiconductor |
Description: MOSFET N-CH 600V 15A TO-220FM Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V |
auf Bestellung 648 Stücke: Lieferzeit 10-14 Tag (e) |
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R6020FNX | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO220FM Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V |
Produkt ist nicht verfügbar |
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R6004CNDTL | Rohm Semiconductor | Description: MOSFET N-CH 600V 4A CPT |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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R6008FNJTL | Rohm Semiconductor | Description: MOSFET N-CH 600V 8A LPTS |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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RFN10B3STL | Rohm Semiconductor |
Description: DIODE GEN PURP 350V 10A CPD Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: CPD Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 350 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 350 V |
Produkt ist nicht verfügbar |
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MP6K11TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 3.5A MPT6 |
Produkt ist nicht verfügbar |
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MP6K12TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 5A MPT6 |
Produkt ist nicht verfügbar |
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MP6K14TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 8A MPT6 |
Produkt ist nicht verfügbar |
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MP6K31TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 60V 2A MPT6 |
Produkt ist nicht verfügbar |
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MP6M11TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 30V 3.5A MPT6 |
Produkt ist nicht verfügbar |
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MP6M12TCR | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 5A MPT6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: MPT6 |
Produkt ist nicht verfügbar |
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MP6M14TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 30V 8A/6A MPT6 |
Produkt ist nicht verfügbar |
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QS8K51TR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 2A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A Supplier Device Package: TSMT8 Part Status: Not For New Designs |
Produkt ist nicht verfügbar |
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QS8M11TCR | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 3.5A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Supplier Device Package: TSMT8 Part Status: Not For New Designs |
Produkt ist nicht verfügbar |
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QS8M12TCR | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 4A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Rds On (Max) @ Id, Vgs: 42mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Not For New Designs |
Produkt ist nicht verfügbar |
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QS8M13TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 30V 6A/5A TSMT8 |
Produkt ist nicht verfügbar |
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QS8M51TR | Rohm Semiconductor |
Description: MOSFET N/P-CH 100V 2A/1.5A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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RCJ300N20TL | Rohm Semiconductor |
Description: MOSFET N-CH 200V 30A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V |
Produkt ist nicht verfügbar |
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RCJ330N25TL | Rohm Semiconductor |
Description: MOSFET N-CH 250V 33A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V |
Produkt ist nicht verfügbar |
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RCJ450N20TL | Rohm Semiconductor |
Description: MOSFET N-CH 200V 45A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V |
Produkt ist nicht verfügbar |
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RCJ510N25TL | Rohm Semiconductor |
Description: MOSFET N-CH 250V 51A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 25.5A, 10V Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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RCJ700N20TL | Rohm Semiconductor |
Description: MOSFET N-CH 200V 70A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 42.7mOhm @ 35A, 10V Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V |
Produkt ist nicht verfügbar |
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RF201L4STE25 | Rohm Semiconductor |
Description: DIODE GEN PURP 400V 1.5A PMDS Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
Produkt ist nicht verfügbar |
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RFN1L6STE25 | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 800MA PMDS Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 800mA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 800 mA Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
Produkt ist nicht verfügbar |
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RFN1L7STE25 | Rohm Semiconductor |
Description: DIODE GEN PURP 700V 800MA PMDS Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Current - Average Rectified (Io): 800mA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 700 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA Current - Reverse Leakage @ Vr: 1 µA @ 700 V |
Produkt ist nicht verfügbar |
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RFUH10NS6STL | Rohm Semiconductor | Description: DIODE GEN PURP 600V 10A LPDS |
Produkt ist nicht verfügbar |
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RFUH20NS6STL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 20A LPDS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
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RP1E070XNTCR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 7A MPT6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: MPT6 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 10 V |
Produkt ist nicht verfügbar |
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RP1E075RPTR | Rohm Semiconductor | Description: MOSFET P-CH 30V 7.5A MPT6 |
Produkt ist nicht verfügbar |
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RP1E090XNTCR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 9A MPT6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: MPT6 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V |
Produkt ist nicht verfügbar |
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RP1E100XNTR | Rohm Semiconductor | Description: MOSFET N-CH 30V 10A MPT6 |
Produkt ist nicht verfügbar |
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RP1E125XNTR | Rohm Semiconductor | Description: MOSFET N-CH 30V 12.5A MPT6 |
Produkt ist nicht verfügbar |
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RP1H065SPTR | Rohm Semiconductor |
Description: MOSFET P-CH 45V 6.5A MPT6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 6.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: MPT6 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 10 V |
Produkt ist nicht verfügbar |
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RP1L055SNTR | Rohm Semiconductor |
Description: MOSFET N-CH 60V 5.5A MPT6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 49mOhm @ 5.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: MPT6 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 10 V |
Produkt ist nicht verfügbar |
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RP1L080SNTR | Rohm Semiconductor | Description: MOSFET N-CH 60V 8A MPT6 |
Produkt ist nicht verfügbar |
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RQ3E100MNTB1 | Rohm Semiconductor | Description: MOSFET N-CH 30V 10A HSMT8 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ3E150MNTB1 | Rohm Semiconductor | Description: MOSFET N-CH 30V 15A 8HSMT |
Produkt ist nicht verfügbar |
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RSB33VTE-17 | Rohm Semiconductor |
Description: TVS DIODE 25VWM UMD2 Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 30pF @ 1MHz Voltage - Reverse Standoff (Typ): 25V Supplier Device Package: UMD2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 29.7V Power Line Protection: No Part Status: Not For New Designs |
auf Bestellung 147000 Stücke: Lieferzeit 10-14 Tag (e) |
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RSB36VTE-17 | Rohm Semiconductor |
Description: TVS DIODE 27VWM UMD2 Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 30pF @ 1MHz Voltage - Reverse Standoff (Typ): 27V Supplier Device Package: UMD2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 32.4V Power Line Protection: No Part Status: Not For New Designs |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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RSB39VTE-17 | Rohm Semiconductor |
Description: TVS DIODE 30VWM UMD2 Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 30pF @ 1MHz Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: UMD2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 35.1V Power Line Protection: No Part Status: Not For New Designs |
auf Bestellung 114000 Stücke: Lieferzeit 10-14 Tag (e) |
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RSB5.6SMT2N | Rohm Semiconductor |
Description: TVS DIODE 2.5VWM EMD2 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 2.5V Supplier Device Package: EMD2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 4.76V Power - Peak Pulse: 10W Power Line Protection: No Part Status: Not For New Designs |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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RSB6.8CST2RA | Rohm Semiconductor | Description: TVS DIODE 3.5VWM VMN2 |
Produkt ist nicht verfügbar |
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RSB6.8ZST2N | Rohm Semiconductor | Description: TVS DIODE 3.5VWM GMD2 |
Produkt ist nicht verfügbar |
PSL0102WBEB1 |
Hersteller: Rohm Semiconductor
Description: LED PSL0102 COOL WHT 5000K 2SMD
Description: LED PSL0102 COOL WHT 5000K 2SMD
auf Bestellung 1927 Stücke:
Lieferzeit 10-14 Tag (e)BZ6A1206GM_EVK |
Hersteller: Rohm Semiconductor
Description: BOARD EVAL BUCK 1.2V BZ6A1206
Description: BOARD EVAL BUCK 1.2V BZ6A1206
Produkt ist nicht verfügbar
BD88415GUL-E2 |
Hersteller: Rohm Semiconductor
Description: IC HEADPHONE AMP 2-CH 14CSP
Description: IC HEADPHONE AMP 2-CH 14CSP
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)BD88415GUL-E2 |
Hersteller: Rohm Semiconductor
Description: IC HEADPHONE AMP 2-CH 14CSP
Description: IC HEADPHONE AMP 2-CH 14CSP
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)BD88415GUL-E2 |
Hersteller: Rohm Semiconductor
Description: IC HEADPHONE AMP 2-CH 14CSP
Description: IC HEADPHONE AMP 2-CH 14CSP
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)RMW130N03TB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 13A 8PSOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: MOSFET N-CH 30V 13A 8PSOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.55 EUR |
RMW200N03TB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 20A 8PSOP
Description: MOSFET N-CH 30V 20A 8PSOP
Produkt ist nicht verfügbar
RMW280N03TB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 28A 8PSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 28A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-PSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 15 V
Description: MOSFET N-CH 30V 28A 8PSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 28A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-PSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 15 V
Produkt ist nicht verfügbar
RMW130N03TB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 13A 8PSOP
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: MOSFET N-CH 30V 13A 8PSOP
Packaging: Cut Tape (CT)
Part Status: Obsolete
auf Bestellung 4815 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 1.34 EUR |
17+ | 1.1 EUR |
100+ | 0.85 EUR |
500+ | 0.72 EUR |
1000+ | 0.59 EUR |
RMW150N03TB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 15A 8PSOP
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: MOSFET N-CH 30V 15A 8PSOP
Packaging: Cut Tape (CT)
Part Status: Obsolete
auf Bestellung 1738 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.48 EUR |
14+ | 1.28 EUR |
100+ | 0.88 EUR |
500+ | 0.74 EUR |
1000+ | 0.63 EUR |
RMW180N03TB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 18A 8PSOP
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: MOSFET N-CH 30V 18A 8PSOP
Packaging: Cut Tape (CT)
Part Status: Obsolete
auf Bestellung 2415 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.64 EUR |
14+ | 1.33 EUR |
100+ | 1.03 EUR |
500+ | 0.88 EUR |
1000+ | 0.71 EUR |
RMW200N03TB |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 20A 8PSOP
Description: MOSFET N-CH 30V 20A 8PSOP
auf Bestellung 2210 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.39 EUR |
16+ | 1.15 EUR |
100+ | 1.01 EUR |
500+ | 0.95 EUR |
1000+ | 0.93 EUR |
R5009FNX |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 9A TO220FM
Description: MOSFET N-CH 500V 9A TO220FM
auf Bestellung 130 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.46 EUR |
10+ | 5.81 EUR |
100+ | 4.76 EUR |
R5011FNX |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 11A TO-220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 5.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Description: MOSFET N-CH 500V 11A TO-220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 5.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
auf Bestellung 418 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.6 EUR |
10+ | 5.53 EUR |
100+ | 4.47 EUR |
R5016FNX |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 16A TO-220FM
Description: MOSFET N-CH 500V 16A TO-220FM
auf Bestellung 568 Stücke:
Lieferzeit 10-14 Tag (e)R6008FNX |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 8A TO-220FM
Description: MOSFET N-CH 600V 8A TO-220FM
auf Bestellung 777 Stücke:
Lieferzeit 10-14 Tag (e)R6012FNX |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 12A TO220FM
Description: MOSFET N-CH 600V 12A TO220FM
Produkt ist nicht verfügbar
R6015FNX |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A TO-220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Description: MOSFET N-CH 600V 15A TO-220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
auf Bestellung 648 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 9.36 EUR |
10+ | 7.86 EUR |
100+ | 6.36 EUR |
500+ | 5.65 EUR |
R6020FNX |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Produkt ist nicht verfügbar
R6004CNDTL |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 4A CPT
Description: MOSFET N-CH 600V 4A CPT
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)R6008FNJTL |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 8A LPTS
Description: MOSFET N-CH 600V 8A LPTS
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)RFN10B3STL |
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 350V 10A CPD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: CPD
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Description: DIODE GEN PURP 350V 10A CPD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: CPD
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Produkt ist nicht verfügbar
MP6K11TCR |
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 3.5A MPT6
Description: MOSFET 2N-CH 30V 3.5A MPT6
Produkt ist nicht verfügbar
MP6K12TCR |
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 5A MPT6
Description: MOSFET 2N-CH 30V 5A MPT6
Produkt ist nicht verfügbar
MP6K14TCR |
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 8A MPT6
Description: MOSFET 2N-CH 30V 8A MPT6
Produkt ist nicht verfügbar
MP6K31TCR |
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 2A MPT6
Description: MOSFET 2N-CH 60V 2A MPT6
Produkt ist nicht verfügbar
MP6M11TCR |
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 3.5A MPT6
Description: MOSFET N/P-CH 30V 3.5A MPT6
Produkt ist nicht verfügbar
MP6M12TCR |
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 5A MPT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT6
Description: MOSFET N/P-CH 30V 5A MPT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT6
Produkt ist nicht verfügbar
MP6M14TCR |
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 8A/6A MPT6
Description: MOSFET N/P-CH 30V 8A/6A MPT6
Produkt ist nicht verfügbar
QS8K51TR |
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 2A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Supplier Device Package: TSMT8
Part Status: Not For New Designs
Description: MOSFET 2N-CH 30V 2A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Supplier Device Package: TSMT8
Part Status: Not For New Designs
Produkt ist nicht verfügbar
QS8M11TCR |
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 3.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Supplier Device Package: TSMT8
Part Status: Not For New Designs
Description: MOSFET N/P-CH 30V 3.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Supplier Device Package: TSMT8
Part Status: Not For New Designs
Produkt ist nicht verfügbar
QS8M12TCR |
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 4A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Not For New Designs
Description: MOSFET N/P-CH 30V 4A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Not For New Designs
Produkt ist nicht verfügbar
QS8M13TCR |
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 6A/5A TSMT8
Description: MOSFET N/P-CH 30V 6A/5A TSMT8
Produkt ist nicht verfügbar
QS8M51TR |
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 2A/1.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET N/P-CH 100V 2A/1.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.82 EUR |
RCJ300N20TL |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 30A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Description: MOSFET N-CH 200V 30A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Produkt ist nicht verfügbar
RCJ330N25TL |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 33A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Description: MOSFET N-CH 250V 33A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
RCJ450N20TL |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 45A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Description: MOSFET N-CH 200V 45A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
RCJ510N25TL |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 51A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 25.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Description: MOSFET N-CH 250V 51A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 25.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 3.52 EUR |
RCJ700N20TL |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 70A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 35A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Description: MOSFET N-CH 200V 70A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 35A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Produkt ist nicht verfügbar
RF201L4STE25 |
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 400V 1.5A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 1.5A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
RFN1L6STE25 |
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 800MA PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 800MA PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
RFN1L7STE25 |
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 700V 800MA PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 700 V
Description: DIODE GEN PURP 700V 800MA PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 700 V
Produkt ist nicht verfügbar
RFUH10NS6STL |
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 10A LPDS
Description: DIODE GEN PURP 600V 10A LPDS
Produkt ist nicht verfügbar
RFUH20NS6STL |
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 20A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 20A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
RP1E070XNTCR |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 7A MPT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT6
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 10 V
Description: MOSFET N-CH 30V 7A MPT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT6
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 10 V
Produkt ist nicht verfügbar
RP1E075RPTR |
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 7.5A MPT6
Description: MOSFET P-CH 30V 7.5A MPT6
Produkt ist nicht verfügbar
RP1E090XNTCR |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 9A MPT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT6
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
Description: MOSFET N-CH 30V 9A MPT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT6
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
Produkt ist nicht verfügbar
RP1E100XNTR |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A MPT6
Description: MOSFET N-CH 30V 10A MPT6
Produkt ist nicht verfügbar
RP1E125XNTR |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 12.5A MPT6
Description: MOSFET N-CH 30V 12.5A MPT6
Produkt ist nicht verfügbar
RP1H065SPTR |
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 45V 6.5A MPT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: MPT6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 10 V
Description: MOSFET P-CH 45V 6.5A MPT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: MPT6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 10 V
Produkt ist nicht verfügbar
RP1L055SNTR |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 5.5A MPT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 49mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: MPT6
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 10 V
Description: MOSFET N-CH 60V 5.5A MPT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 49mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: MPT6
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 10 V
Produkt ist nicht verfügbar
RP1L080SNTR |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 8A MPT6
Description: MOSFET N-CH 60V 8A MPT6
Produkt ist nicht verfügbar
RQ3E100MNTB1 |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A HSMT8
Description: MOSFET N-CH 30V 10A HSMT8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.78 EUR |
RQ3E150MNTB1 |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 15A 8HSMT
Description: MOSFET N-CH 30V 15A 8HSMT
Produkt ist nicht verfügbar
RSB33VTE-17 |
Hersteller: Rohm Semiconductor
Description: TVS DIODE 25VWM UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 25VWM UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 147000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.17 EUR |
6000+ | 0.16 EUR |
15000+ | 0.15 EUR |
RSB36VTE-17 |
Hersteller: Rohm Semiconductor
Description: TVS DIODE 27VWM UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 27V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 32.4V
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 27VWM UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 27V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 32.4V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.16 EUR |
6000+ | 0.15 EUR |
9000+ | 0.13 EUR |
RSB39VTE-17 |
Hersteller: Rohm Semiconductor
Description: TVS DIODE 30VWM UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 30VWM UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 114000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.15 EUR |
6000+ | 0.14 EUR |
15000+ | 0.13 EUR |
30000+ | 0.12 EUR |
RSB5.6SMT2N |
Hersteller: Rohm Semiconductor
Description: TVS DIODE 2.5VWM EMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 2.5V
Supplier Device Package: EMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4.76V
Power - Peak Pulse: 10W
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 2.5VWM EMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 2.5V
Supplier Device Package: EMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4.76V
Power - Peak Pulse: 10W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8000+ | 0.1 EUR |
16000+ | 0.086 EUR |
RSB6.8CST2RA |
Hersteller: Rohm Semiconductor
Description: TVS DIODE 3.5VWM VMN2
Description: TVS DIODE 3.5VWM VMN2
Produkt ist nicht verfügbar
RSB6.8ZST2N |
Hersteller: Rohm Semiconductor
Description: TVS DIODE 3.5VWM GMD2
Description: TVS DIODE 3.5VWM GMD2
Produkt ist nicht verfügbar