Produkte > RENESAS ELECTRONICS CORPORATION > Alle Produkte des Herstellers RENESAS ELECTRONICS CORPORATION (22197) > Seite 90 nach 370
Foto | Bezeichnung | Hersteller | Beschreibung |
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ISL78205AVEZ-T | Renesas Electronics Corporation |
Description: IC REG BUCK ADJ 2.5A 20HTSSOP Packaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 2.5A Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 200kHz ~ 2.2MHz Voltage - Input (Max): 40V Topology: Buck Supplier Device Package: 20-HTSSOP Synchronous Rectifier: Both Voltage - Output (Max): 38V Voltage - Input (Min): 3V Voltage - Output (Min/Fixed): 0.8V Grade: Automotive Part Status: Obsolete Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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ISL78310ARAJZ | Renesas Electronics Corporation |
Description: IC REG LINEAR POS ADJ 1A 10DFN Packaging: Tube Package / Case: 10-VFDFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 5 mA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 10-DFN (3x3) Voltage - Output (Max): 5V Voltage - Output (Min/Fixed): 0.8V Control Features: Enable, Power Good, Soft Start Grade: Automotive PSRR: 72dB ~ 58dB (120Hz ~ 1KHz) Voltage Dropout (Max): 0.212V @ 1A Protection Features: Over Temperature, Short Circuit Current - Supply (Max): 7 mA Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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ISL78310ARAJZ-T | Renesas Electronics Corporation |
Description: IC REG LINEAR POS ADJ 1A 10DFN Packaging: Tape & Reel (TR) Package / Case: 10-VFDFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 5 mA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 10-DFN (3x3) Voltage - Output (Max): 5V Voltage - Output (Min/Fixed): 0.8V Control Features: Enable, Power Good, Soft Start Grade: Automotive PSRR: 72dB ~ 58dB (120Hz ~ 1KHz) Voltage Dropout (Max): 0.212V @ 1A Protection Features: Over Temperature, Short Circuit Current - Supply (Max): 7 mA Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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ISL9000IRCJZ-T | Renesas Electronics Corporation |
Description: IC REG LINEAR 1.8V/2.8V 10DFN Packaging: Tape & Reel (TR) Package / Case: 10-VFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA, 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 32 µA Voltage - Input (Max): 6.5V Number of Regulators: 2 Supplier Device Package: 10-DFN (3x3) Voltage - Output (Min/Fixed): 1.8V, 2.8V Control Features: Enable, Power On Reset PSRR: 90db ~ 50dB (1kHz ~ 100kHz), - Voltage Dropout (Max): -, 0.4V @ 300mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Current - Supply (Max): 52 µA |
Produkt ist nicht verfügbar |
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BCR08AM-14A-A6#B00 | Renesas Electronics Corporation |
Description: TRIAC SENS GATE 700V 0.8A TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 2 V Supplier Device Package: TO-92 Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 700 V |
Produkt ist nicht verfügbar |
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R1LV0808ASB-5SI#B0 | Renesas Electronics Corporation |
Description: IC SRAM 8MBIT PARALLEL 44TSOP II Packaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: SRAM Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 1M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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R1LV0808ASB-7SI#B0 | Renesas Electronics Corporation |
Description: IC SRAM 8MBIT PARALLEL 44TSOP II Packaging: Bulk Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.4V ~ 3.6V Technology: SRAM Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 1M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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R1LV0816ABG-5SI#B0 | Renesas Electronics Corporation |
Description: IC SRAM 8MBIT PARALLEL 48TFBGA Packaging: Bulk Package / Case: 48-TFBGA Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: SRAM Memory Format: SRAM Supplier Device Package: 48-TFBGA (7.5x8.5) Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 512K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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R1LV0816ABG-7SI#B0 | Renesas Electronics Corporation |
Description: IC SRAM 8MBIT PARALLEL 48TFBGA Packaging: Bulk Package / Case: 48-TFBGA Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.4V ~ 3.6V Technology: SRAM Memory Format: SRAM Supplier Device Package: 48-TFBGA (7.5x8.5) Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 512K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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R1LV0816ASB-5SI#B0 | Renesas Electronics Corporation |
Description: IC SRAM 8MBIT PARALLEL 44TSOP II Packaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: SRAM Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 512K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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RJH60D0DPK-00#T0 | Renesas Electronics Corporation |
Description: IGBT TRENCH 600V 45A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A Supplier Device Package: TO-3P IGBT Type: Trench Td (on/off) @ 25°C: 40ns/80ns Switching Energy: 230µJ (on), 290µJ (off) Test Condition: 300V, 22A, 5Ohm, 15V Gate Charge: 46 nC Part Status: Active Current - Collector (Ic) (Max): 45 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 140 W |
Produkt ist nicht verfügbar |
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RJH60D0DPM-00#T1 | Renesas Electronics Corporation |
Description: IGBT TRENCH 600V 45A TO3PFM Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A Supplier Device Package: TO-3PFM IGBT Type: Trench Td (on/off) @ 25°C: 40ns/80ns Switching Energy: 230µJ (on), 290µJ (off) Test Condition: 300V, 22A, 5Ohm, 15V Gate Charge: 46 nC Part Status: Active Current - Collector (Ic) (Max): 45 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 40 W |
Produkt ist nicht verfügbar |
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RJH60D1DPP-M0#T2 | Renesas Electronics Corporation |
Description: IGBT TRENCH 600V 20A TO220FL Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Supplier Device Package: TO-220FL IGBT Type: Trench Td (on/off) @ 25°C: 30ns/42ns Switching Energy: 100µJ (on), 130µJ (off) Test Condition: 300V, 10A, 5Ohm, 15V Gate Charge: 13 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 30 W |
Produkt ist nicht verfügbar |
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RJH60D2DPP-M0#T2 | Renesas Electronics Corporation |
Description: IGBT TRENCH 600V 25A TO220FL Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A Supplier Device Package: TO-220FL IGBT Type: Trench Td (on/off) @ 25°C: 32ns/85ns Switching Energy: 100µJ (on), 160µJ (off) Test Condition: 300V, 12A, 5Ohm, 15V Gate Charge: 19 nC Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 34 W |
Produkt ist nicht verfügbar |
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RJH60D5DPK-00#T0 | Renesas Electronics Corporation |
Description: IGBT TRENCH 600V 75A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 37A Supplier Device Package: TO-3P IGBT Type: Trench Td (on/off) @ 25°C: 50ns/135ns Switching Energy: 650µJ (on), 400µJ (off) Test Condition: 300V, 37A, 5Ohm, 15V Gate Charge: 78 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 200 W |
Produkt ist nicht verfügbar |
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RJH60D5DPM-00#T1 | Renesas Electronics Corporation |
Description: IGBT TRENCH 600V 75A TO3PFM Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 37A Supplier Device Package: TO-3PFM IGBT Type: Trench Td (on/off) @ 25°C: 50ns/135ns Switching Energy: 650µJ (on), 270µJ (off) Test Condition: 300V, 37A, 5Ohm, 15V Gate Charge: 78 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 45 W |
Produkt ist nicht verfügbar |
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RJH60D6DPK-00#T0 | Renesas Electronics Corporation |
Description: IGBT TRENCH 600V 80A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A Supplier Device Package: TO-3P IGBT Type: Trench Td (on/off) @ 25°C: 50ns/160ns Switching Energy: 850µJ (on), 600µJ (off) Test Condition: 300V, 40A, 5Ohm, 15V Gate Charge: 104 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 260 W |
Produkt ist nicht verfügbar |
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RJH60D7DPK-00#T0 | Renesas Electronics Corporation |
Description: IGBT TRENCH 600V 90A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Supplier Device Package: TO-3P IGBT Type: Trench Td (on/off) @ 25°C: 60ns/190ns Switching Energy: 1.1mJ (on), 600µJ (off) Test Condition: 300V, 50A, 5Ohm, 15V Gate Charge: 130 nC Part Status: Active Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 300 W |
Produkt ist nicht verfügbar |
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RJH60D7DPM-00#T1 | Renesas Electronics Corporation |
Description: IGBT TRENCH 600V 90A TO3PFM Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Supplier Device Package: TO-3PFM IGBT Type: Trench Td (on/off) @ 25°C: 60ns/190ns Switching Energy: 1.1mJ (on), 600µJ (off) Test Condition: 300V, 50A, 5Ohm, 15V Gate Charge: 130 nC Part Status: Active Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 55 W |
Produkt ist nicht verfügbar |
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RJH60F5DPQ-A0#T0 | Renesas Electronics Corporation |
Description: IGBT TRENCH 600V 80A TO247A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: TO-247A IGBT Type: Trench Td (on/off) @ 25°C: 53ns/105ns Test Condition: 400V, 30A, 5Ohm, 15V Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 260.4 W |
Produkt ist nicht verfügbar |
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RJH60F6DPQ-A0#T0 | Renesas Electronics Corporation |
Description: IGBT 600V 85A 297.6W TO247A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 45A Supplier Device Package: TO-247A IGBT Type: Trench Td (on/off) @ 25°C: 58ns/131ns Test Condition: 400V, 30A, 5Ohm, 15V Part Status: Obsolete Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 297.6 W |
Produkt ist nicht verfügbar |
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RJH60F7DPQ-A0#T0 | Renesas Electronics Corporation |
Description: IGBT TRENCH 600V 90A TO247A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A Supplier Device Package: TO-247A IGBT Type: Trench Td (on/off) @ 25°C: 63ns/142ns Test Condition: 400V, 30A, 5Ohm, 15V Part Status: Active Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 328.9 W |
Produkt ist nicht verfügbar |
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RKZ6.8Z4MFAKT#H1 | Renesas Electronics Corporation |
Description: TVS DIODE 3.5VWM 5VSON Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 4pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.5V Supplier Device Package: 5-VSON Unidirectional Channels: 4 Voltage - Breakdown (Min): 6.47V Power Line Protection: No |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SJ687-ZK-E1-AY | Renesas Electronics Corporation |
Description: MOSFET P-CH 20V 20A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 4.5V Power Dissipation (Max): 1W (Ta), 36W (Tc) Supplier Device Package: TO-252 (MP-3ZK) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 10 V |
auf Bestellung 4251 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK3811-ZP-E1-AY | Renesas Electronics Corporation |
Description: MOSFET N-CH 40V 110A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 55A, 10V Power Dissipation (Max): 1.5W (Ta), 213W (Tc) Supplier Device Package: TO-263 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17700 pF @ 10 V |
Produkt ist nicht verfügbar |
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NP35N04YUG-E1-AY | Renesas Electronics Corporation |
Description: MOSFET N-CH 40V 35A 8HSON Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Exposed Pad Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 17.5A, 10V Power Dissipation (Max): 1W (Ta), 77W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HSON Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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NP60N03SUG-E1-AY | Renesas Electronics Corporation |
Description: MOSFET N-CH 30V 60A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V Power Dissipation (Max): 1.2W (Ta), 105W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (MP-3ZK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V |
Produkt ist nicht verfügbar |
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NP74N04YUG-E1-AY | Renesas Electronics Corporation |
Description: MOSFET N-CH 40V 75A 8HSON Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Exposed Pad Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 37.5A, 10V Power Dissipation (Max): 1W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HSON Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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NP75N04YUG-E1-AY | Renesas Electronics Corporation |
Description: MOSFET N-CH 40V 75A 8HSON Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Exposed Pad Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 37.5A, 10V Power Dissipation (Max): 1W (Ta), 138W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HSON Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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NP80N06PLG-E1B-AY | Renesas Electronics Corporation |
Description: MOSFET N-CH 60V 80A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 40A, 10V Power Dissipation (Max): 1.8W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V |
Produkt ist nicht verfügbar |
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NP82N055PUG-E1-AY | Renesas Electronics Corporation |
Description: MOSFET N-CH 55V 82A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 41A, 10V Power Dissipation (Max): 1.8W (Ta), 143W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V |
Produkt ist nicht verfügbar |
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RJK0305DPB-02#J0 | Renesas Electronics Corporation |
Description: MOSFET N-CH 30V 30A LFPAK Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V Supplier Device Package: LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V |
Produkt ist nicht verfügbar |
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RJK0451DPB-00#J5 | Renesas Electronics Corporation |
Description: MOSFET N-CH 40V 35A LFPAK Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 17.5A, 10V Power Dissipation (Max): 45W (Tc) Supplier Device Package: LFPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 10 V |
Produkt ist nicht verfügbar |
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RJK0452DPB-00#J5 | Renesas Electronics Corporation |
Description: MOSFET N-CH 40V 45A LFPAK Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 22.5A, 10V Power Dissipation (Max): 55W (Tc) Supplier Device Package: LFPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 10 V |
auf Bestellung 2240 Stücke: Lieferzeit 10-14 Tag (e) |
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RJK0454DPB-00#J5 | Renesas Electronics Corporation |
Description: MOSFET N-CH 40V 40A LFPAK Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V Power Dissipation (Max): 55W (Tc) Supplier Device Package: LFPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V |
auf Bestellung 2220 Stücke: Lieferzeit 10-14 Tag (e) |
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RJK0455DPB-00#J5 | Renesas Electronics Corporation |
Description: MOSFET N-CH 40V 45A LFPAK Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 22.5A, 10V Power Dissipation (Max): 60W (Tc) Supplier Device Package: LFPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V |
auf Bestellung 7490 Stücke: Lieferzeit 10-14 Tag (e) |
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RJK0456DPB-00#J5 | Renesas Electronics Corporation |
Description: MOSFET N-CH 40V 50A LFPAK Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V Power Dissipation (Max): 65W (Tc) Supplier Device Package: LFPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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RJK0651DPB-00#J5 | Renesas Electronics Corporation |
Description: MOSFET N-CH 60V 25A LFPAK Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 12.5A, 10V Power Dissipation (Max): 45W (Tc) Supplier Device Package: LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 10 V |
auf Bestellung 22500 Stücke: Lieferzeit 10-14 Tag (e) |
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RJK0852DPB-00#J5 | Renesas Electronics Corporation |
Description: MOSFET N-CH 80V 30A LFPAK Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V Power Dissipation (Max): 55W (Tc) Supplier Device Package: LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V |
auf Bestellung 838 Stücke: Lieferzeit 10-14 Tag (e) |
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RJK0853DPB-00#J5 | Renesas Electronics Corporation |
Description: MOSFET N-CH 80V 40A LFPAK Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 65W (Tc) Supplier Device Package: LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6170 pF @ 10 V |
auf Bestellung 2450 Stücke: Lieferzeit 10-14 Tag (e) |
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RJK1052DPB-00#J5 | Renesas Electronics Corporation |
Description: MOSFET N-CH 100V 20A LFPAK Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 55W (Tc) Supplier Device Package: LFPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4160 pF @ 10 V |
auf Bestellung 4073 Stücke: Lieferzeit 10-14 Tag (e) |
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RJK1055DPB-00#J5 | Renesas Electronics Corporation |
Description: MOSFET N-CH 100V 23A LFPAK Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 11.5A, 10V Power Dissipation (Max): 60W (Tc) Supplier Device Package: LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V |
auf Bestellung 6859 Stücke: Lieferzeit 10-14 Tag (e) |
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RJK1056DPB-00#J5 | Renesas Electronics Corporation |
Description: MOSFET N-CH 100V 25A LFPAK Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 12.5A, 10V Power Dissipation (Max): 65W (Tc) Supplier Device Package: LFPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V |
auf Bestellung 2300 Stücke: Lieferzeit 10-14 Tag (e) |
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RJK5033DPD-00#J2 | Renesas Electronics Corporation |
Description: MOSFET N-CH 500V 6A MP3A Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V Power Dissipation (Max): 65W (Tc) Supplier Device Package: MP-3A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RJK6025DPD-00#J2 | Renesas Electronics Corporation |
Description: MOSFET N-CH 600V 1A MP3A Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 17.5Ohm @ 500mA, 10V Power Dissipation (Max): 29.7W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: MP-3A Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 37.5 pF @ 25 V |
Produkt ist nicht verfügbar |
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BCR5AS-12A-T13#B00 | Renesas Electronics Corporation |
Description: TRIAC 600V 5A MP3A Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 50A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: MP-3A Part Status: Active Current - On State (It (RMS)) (Max): 5 A Voltage - Off State: 600 V |
Produkt ist nicht verfügbar |
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ISL95831HRTZ | Renesas Electronics Corporation |
Description: IC REG CONV INTEL 2OUT 48TQFN Packaging: Tube Package / Case: 48-WFQFN Exposed Pad Voltage - Output: 0.25V ~ 1.52V Mounting Type: Surface Mount Number of Outputs: 2 Voltage - Input: 4.5V ~ 25V Operating Temperature: -10°C ~ 100°C Applications: Converter, Intel IMVP-7, VR12™ Supplier Device Package: 48-TQFN (6x6) |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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ISL95831HRTZ-T | Renesas Electronics Corporation |
Description: IC REG CONV INTEL 2OUT 48TQFN Packaging: Tape & Reel (TR) Package / Case: 48-WFQFN Exposed Pad Voltage - Output: 0.25V ~ 1.52V Mounting Type: Surface Mount Number of Outputs: 2 Voltage - Input: 4.5V ~ 25V Operating Temperature: -10°C ~ 100°C Applications: Converter, Intel IMVP-7, VR12™ Supplier Device Package: 48-TQFN (6x6) |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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ISL9021AIRUFZ-T7A | Renesas Electronics Corporation |
Description: IC REG LINEAR 2.5V 250MA 6UTDFN Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Output Type: Fixed Mounting Type: Surface Mount Current - Output: 250mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 50 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 6-UTDFN (1.6x1.6) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Voltage Dropout (Max): 0.25V @ 250mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Soft Start |
Produkt ist nicht verfügbar |
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ISL95831IRTZ | Renesas Electronics Corporation |
Description: IC REG CONV INTEL 2OUT 48TQFN Packaging: Tube Package / Case: 48-WFQFN Exposed Pad Voltage - Output: 0.25V ~ 1.52V Mounting Type: Surface Mount Number of Outputs: 2 Voltage - Input: 4.5V ~ 25V Operating Temperature: -40°C ~ 85°C Applications: Converter, Intel IMVP-7, VR12™ Supplier Device Package: 48-TQFN (6x6) |
auf Bestellung 860 Stücke: Lieferzeit 10-14 Tag (e) |
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ISL61863IIRZ | Renesas Electronics Corporation |
Description: IC HOT SWAP CTRLR USB 10DFN Features: Fault Timeout, Latched Fault, Thermal Limit, Turn On Voltage, UVLO Packaging: Tube Package / Case: 10-VFDFN Exposed Pad Mounting Type: Surface Mount Type: Hot Swap Controller Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.5V ~ 5.5V Applications: USB Internal Switch(s): Yes Current - Output (Max): 3.6A Supplier Device Package: 10-DFN (3x3) Number of Channels: 2 Current - Supply: 57 µA |
Produkt ist nicht verfügbar |
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TW8831-LB1-CR | Renesas Electronics Corporation |
Description: IC VIDEO LCD CONTROLLER 80LQFP Packaging: Tray Package / Case: 80-LQFP Mounting Type: Surface Mount Function: Controller Voltage - Supply: 1.8V, 3.3V Applications: Consumer Video Standards: NTSC, PAL, SECAM Supplier Device Package: 80-LQFP (10x10) Control Interface: Serial |
Produkt ist nicht verfügbar |
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ISL97687IRTZ | Renesas Electronics Corporation |
Description: IC LED DRVR CTRL PWM 160MA 28QFN Packaging: Tube Package / Case: 28-WFQFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 4 Frequency: 200kHz ~ 1.2MHz Type: DC DC Controller Operating Temperature: -40°C ~ 105°C (TA) Applications: Backlight Current - Output / Channel: 160mA Internal Switch(s): No Topology: Step-Up (Boost) Supplier Device Package: 28-TQFN (5x5) Dimming: Analog, PWM Voltage - Supply (Min): 9V Voltage - Supply (Max): 32V Part Status: Active |
Produkt ist nicht verfügbar |
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ISL97687IRTZ-T | Renesas Electronics Corporation |
Description: IC LED DRVR CTRL PWM 160MA 28QFN Packaging: Tape & Reel (TR) Package / Case: 28-WFQFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 4 Frequency: 200kHz ~ 1.2MHz Type: DC DC Controller Operating Temperature: -40°C ~ 105°C (TA) Applications: Backlight Current - Output / Channel: 160mA Internal Switch(s): No Topology: Step-Up (Boost) Supplier Device Package: 28-TQFN (5x5) Dimming: Analog, PWM Voltage - Supply (Min): 9V Voltage - Supply (Max): 32V |
Produkt ist nicht verfügbar |
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ISL95831IRTZ-T | Renesas Electronics Corporation |
Description: IC REG CONV INTEL 2OUT 48TQFN Packaging: Tape & Reel (TR) Package / Case: 48-WFQFN Exposed Pad Voltage - Output: 0.25V ~ 1.52V Mounting Type: Surface Mount Number of Outputs: 2 Voltage - Input: 4.5V ~ 25V Operating Temperature: -40°C ~ 85°C Applications: Converter, Intel IMVP-7, VR12™ Supplier Device Package: 48-TQFN (6x6) |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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ISL95837IRZ | Renesas Electronics Corporation |
Description: IC REG CONV INTEL 2OUT 40QFN Packaging: Tube Package / Case: 40-VFQFN Exposed Pad Voltage - Output: Up to 1.52V Mounting Type: Surface Mount Number of Outputs: 2 Voltage - Input: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C Applications: Converter, Intel IMVP-7, VR12™ Supplier Device Package: 40-QFN (5x5) |
auf Bestellung 1190 Stücke: Lieferzeit 10-14 Tag (e) |
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TW8832-LB1-CR | Renesas Electronics Corporation |
Description: IC VIDEO LCD CONTROLLER 80LQFP Packaging: Tray Package / Case: 80-LQFP Mounting Type: Surface Mount Function: Controller Applications: Consumer Video Standards: NTSC, PAL, SECAM Supplier Device Package: 80-LQFP (10x10) Control Interface: I2C, Serial, SPI |
Produkt ist nicht verfügbar |
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TW8832S-LB1-CR | Renesas Electronics Corporation |
Description: IC VIDEO LCD CONTROLLER 80LQFP Packaging: Tray Package / Case: 80-LQFP Mounting Type: Surface Mount Function: Controller Applications: Consumer Video Standards: NTSC, PAL, SECAM Supplier Device Package: 80-LQFP (10x10) Control Interface: I2C, Serial, SPI |
Produkt ist nicht verfügbar |
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R5F1008CALA#U0 | Renesas Electronics Corporation |
Description: IC MCU 16BIT 32KB FLASH 25LGA Packaging: Tray Package / Case: 25-WFLGA Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 32KB (32K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: RL78 Data Converters: A/D 6x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V Connectivity: CSI, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 25-LGA (3x3) Number of I/O: 15 DigiKey Programmable: Not Verified |
auf Bestellung 1470 Stücke: Lieferzeit 10-14 Tag (e) |
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R5F1008DALA#U0 | Renesas Electronics Corporation |
Description: IC MCU 16BIT 48KB FLASH 25LGA Packaging: Tray Package / Case: 25-WFLGA Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 48KB (48K x 8) RAM Size: 3K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: RL78 Data Converters: A/D 6x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V Connectivity: CSI, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 25-LGA (3x3) Number of I/O: 15 DigiKey Programmable: Not Verified |
auf Bestellung 980 Stücke: Lieferzeit 10-14 Tag (e) |
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ISL78205AVEZ-T |
Hersteller: Renesas Electronics Corporation
Description: IC REG BUCK ADJ 2.5A 20HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: 20-HTSSOP
Synchronous Rectifier: Both
Voltage - Output (Max): 38V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.8V
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
Description: IC REG BUCK ADJ 2.5A 20HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: 20-HTSSOP
Synchronous Rectifier: Both
Voltage - Output (Max): 38V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.8V
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
Produkt ist nicht verfügbar
ISL78310ARAJZ |
Hersteller: Renesas Electronics Corporation
Description: IC REG LINEAR POS ADJ 1A 10DFN
Packaging: Tube
Package / Case: 10-VFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good, Soft Start
Grade: Automotive
PSRR: 72dB ~ 58dB (120Hz ~ 1KHz)
Voltage Dropout (Max): 0.212V @ 1A
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 7 mA
Qualification: AEC-Q100
Description: IC REG LINEAR POS ADJ 1A 10DFN
Packaging: Tube
Package / Case: 10-VFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good, Soft Start
Grade: Automotive
PSRR: 72dB ~ 58dB (120Hz ~ 1KHz)
Voltage Dropout (Max): 0.212V @ 1A
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 7 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
ISL78310ARAJZ-T |
Hersteller: Renesas Electronics Corporation
Description: IC REG LINEAR POS ADJ 1A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good, Soft Start
Grade: Automotive
PSRR: 72dB ~ 58dB (120Hz ~ 1KHz)
Voltage Dropout (Max): 0.212V @ 1A
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 7 mA
Qualification: AEC-Q100
Description: IC REG LINEAR POS ADJ 1A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good, Soft Start
Grade: Automotive
PSRR: 72dB ~ 58dB (120Hz ~ 1KHz)
Voltage Dropout (Max): 0.212V @ 1A
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 7 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
ISL9000IRCJZ-T |
Hersteller: Renesas Electronics Corporation
Description: IC REG LINEAR 1.8V/2.8V 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 32 µA
Voltage - Input (Max): 6.5V
Number of Regulators: 2
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 1.8V, 2.8V
Control Features: Enable, Power On Reset
PSRR: 90db ~ 50dB (1kHz ~ 100kHz), -
Voltage Dropout (Max): -, 0.4V @ 300mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 52 µA
Description: IC REG LINEAR 1.8V/2.8V 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 32 µA
Voltage - Input (Max): 6.5V
Number of Regulators: 2
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 1.8V, 2.8V
Control Features: Enable, Power On Reset
PSRR: 90db ~ 50dB (1kHz ~ 100kHz), -
Voltage Dropout (Max): -, 0.4V @ 300mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 52 µA
Produkt ist nicht verfügbar
BCR08AM-14A-A6#B00 |
Hersteller: Renesas Electronics Corporation
Description: TRIAC SENS GATE 700V 0.8A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: TO-92
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 700 V
Description: TRIAC SENS GATE 700V 0.8A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: TO-92
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 700 V
Produkt ist nicht verfügbar
R1LV0808ASB-5SI#B0 |
Hersteller: Renesas Electronics Corporation
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
R1LV0808ASB-7SI#B0 |
Hersteller: Renesas Electronics Corporation
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Bulk
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Bulk
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
R1LV0816ABG-5SI#B0 |
Hersteller: Renesas Electronics Corporation
Description: IC SRAM 8MBIT PARALLEL 48TFBGA
Packaging: Bulk
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 48-TFBGA (7.5x8.5)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 8MBIT PARALLEL 48TFBGA
Packaging: Bulk
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 48-TFBGA (7.5x8.5)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
R1LV0816ABG-7SI#B0 |
Hersteller: Renesas Electronics Corporation
Description: IC SRAM 8MBIT PARALLEL 48TFBGA
Packaging: Bulk
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 48-TFBGA (7.5x8.5)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 8MBIT PARALLEL 48TFBGA
Packaging: Bulk
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 48-TFBGA (7.5x8.5)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
R1LV0816ASB-5SI#B0 |
Hersteller: Renesas Electronics Corporation
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
RJH60D0DPK-00#T0 |
Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 45A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
Supplier Device Package: TO-3P
IGBT Type: Trench
Td (on/off) @ 25°C: 40ns/80ns
Switching Energy: 230µJ (on), 290µJ (off)
Test Condition: 300V, 22A, 5Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 140 W
Description: IGBT TRENCH 600V 45A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
Supplier Device Package: TO-3P
IGBT Type: Trench
Td (on/off) @ 25°C: 40ns/80ns
Switching Energy: 230µJ (on), 290µJ (off)
Test Condition: 300V, 22A, 5Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 140 W
Produkt ist nicht verfügbar
RJH60D0DPM-00#T1 |
Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 45A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
Supplier Device Package: TO-3PFM
IGBT Type: Trench
Td (on/off) @ 25°C: 40ns/80ns
Switching Energy: 230µJ (on), 290µJ (off)
Test Condition: 300V, 22A, 5Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 40 W
Description: IGBT TRENCH 600V 45A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
Supplier Device Package: TO-3PFM
IGBT Type: Trench
Td (on/off) @ 25°C: 40ns/80ns
Switching Energy: 230µJ (on), 290µJ (off)
Test Condition: 300V, 22A, 5Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 40 W
Produkt ist nicht verfügbar
RJH60D1DPP-M0#T2 |
Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 20A TO220FL
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-220FL
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/42ns
Switching Energy: 100µJ (on), 130µJ (off)
Test Condition: 300V, 10A, 5Ohm, 15V
Gate Charge: 13 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 30 W
Description: IGBT TRENCH 600V 20A TO220FL
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-220FL
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/42ns
Switching Energy: 100µJ (on), 130µJ (off)
Test Condition: 300V, 10A, 5Ohm, 15V
Gate Charge: 13 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 30 W
Produkt ist nicht verfügbar
RJH60D2DPP-M0#T2 |
Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 25A TO220FL
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
Supplier Device Package: TO-220FL
IGBT Type: Trench
Td (on/off) @ 25°C: 32ns/85ns
Switching Energy: 100µJ (on), 160µJ (off)
Test Condition: 300V, 12A, 5Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 34 W
Description: IGBT TRENCH 600V 25A TO220FL
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
Supplier Device Package: TO-220FL
IGBT Type: Trench
Td (on/off) @ 25°C: 32ns/85ns
Switching Energy: 100µJ (on), 160µJ (off)
Test Condition: 300V, 12A, 5Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 34 W
Produkt ist nicht verfügbar
RJH60D5DPK-00#T0 |
Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 75A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 37A
Supplier Device Package: TO-3P
IGBT Type: Trench
Td (on/off) @ 25°C: 50ns/135ns
Switching Energy: 650µJ (on), 400µJ (off)
Test Condition: 300V, 37A, 5Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 200 W
Description: IGBT TRENCH 600V 75A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 37A
Supplier Device Package: TO-3P
IGBT Type: Trench
Td (on/off) @ 25°C: 50ns/135ns
Switching Energy: 650µJ (on), 400µJ (off)
Test Condition: 300V, 37A, 5Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 200 W
Produkt ist nicht verfügbar
RJH60D5DPM-00#T1 |
Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 75A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 37A
Supplier Device Package: TO-3PFM
IGBT Type: Trench
Td (on/off) @ 25°C: 50ns/135ns
Switching Energy: 650µJ (on), 270µJ (off)
Test Condition: 300V, 37A, 5Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 45 W
Description: IGBT TRENCH 600V 75A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 37A
Supplier Device Package: TO-3PFM
IGBT Type: Trench
Td (on/off) @ 25°C: 50ns/135ns
Switching Energy: 650µJ (on), 270µJ (off)
Test Condition: 300V, 37A, 5Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 45 W
Produkt ist nicht verfügbar
RJH60D6DPK-00#T0 |
Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 80A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-3P
IGBT Type: Trench
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 850µJ (on), 600µJ (off)
Test Condition: 300V, 40A, 5Ohm, 15V
Gate Charge: 104 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 260 W
Description: IGBT TRENCH 600V 80A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-3P
IGBT Type: Trench
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 850µJ (on), 600µJ (off)
Test Condition: 300V, 40A, 5Ohm, 15V
Gate Charge: 104 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 260 W
Produkt ist nicht verfügbar
RJH60D7DPK-00#T0 |
Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 90A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-3P
IGBT Type: Trench
Td (on/off) @ 25°C: 60ns/190ns
Switching Energy: 1.1mJ (on), 600µJ (off)
Test Condition: 300V, 50A, 5Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 300 W
Description: IGBT TRENCH 600V 90A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-3P
IGBT Type: Trench
Td (on/off) @ 25°C: 60ns/190ns
Switching Energy: 1.1mJ (on), 600µJ (off)
Test Condition: 300V, 50A, 5Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 300 W
Produkt ist nicht verfügbar
RJH60D7DPM-00#T1 |
Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 90A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench
Td (on/off) @ 25°C: 60ns/190ns
Switching Energy: 1.1mJ (on), 600µJ (off)
Test Condition: 300V, 50A, 5Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 55 W
Description: IGBT TRENCH 600V 90A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench
Td (on/off) @ 25°C: 60ns/190ns
Switching Energy: 1.1mJ (on), 600µJ (off)
Test Condition: 300V, 50A, 5Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 55 W
Produkt ist nicht verfügbar
RJH60F5DPQ-A0#T0 |
Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 80A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 53ns/105ns
Test Condition: 400V, 30A, 5Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 260.4 W
Description: IGBT TRENCH 600V 80A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 53ns/105ns
Test Condition: 400V, 30A, 5Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 260.4 W
Produkt ist nicht verfügbar
RJH60F6DPQ-A0#T0 |
Hersteller: Renesas Electronics Corporation
Description: IGBT 600V 85A 297.6W TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 45A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 58ns/131ns
Test Condition: 400V, 30A, 5Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 297.6 W
Description: IGBT 600V 85A 297.6W TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 45A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 58ns/131ns
Test Condition: 400V, 30A, 5Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 297.6 W
Produkt ist nicht verfügbar
RJH60F7DPQ-A0#T0 |
Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 90A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 63ns/142ns
Test Condition: 400V, 30A, 5Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 328.9 W
Description: IGBT TRENCH 600V 90A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 63ns/142ns
Test Condition: 400V, 30A, 5Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 328.9 W
Produkt ist nicht verfügbar
RKZ6.8Z4MFAKT#H1 |
Hersteller: Renesas Electronics Corporation
Description: TVS DIODE 3.5VWM 5VSON
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 4pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: 5-VSON
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.47V
Power Line Protection: No
Description: TVS DIODE 3.5VWM 5VSON
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 4pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: 5-VSON
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.47V
Power Line Protection: No
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.14 EUR |
2SJ687-ZK-E1-AY |
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 20V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 4.5V
Power Dissipation (Max): 1W (Ta), 36W (Tc)
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 10 V
Description: MOSFET P-CH 20V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 4.5V
Power Dissipation (Max): 1W (Ta), 36W (Tc)
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 10 V
auf Bestellung 4251 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.15 EUR |
10+ | 3.46 EUR |
100+ | 2.76 EUR |
500+ | 2.33 EUR |
1000+ | 1.98 EUR |
2SK3811-ZP-E1-AY |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 55A, 10V
Power Dissipation (Max): 1.5W (Ta), 213W (Tc)
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17700 pF @ 10 V
Description: MOSFET N-CH 40V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 55A, 10V
Power Dissipation (Max): 1.5W (Ta), 213W (Tc)
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17700 pF @ 10 V
Produkt ist nicht verfügbar
NP35N04YUG-E1-AY |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 35A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 17.5A, 10V
Power Dissipation (Max): 1W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
Description: MOSFET N-CH 40V 35A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 17.5A, 10V
Power Dissipation (Max): 1W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.64 EUR |
NP60N03SUG-E1-AY |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Description: MOSFET N-CH 30V 60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Produkt ist nicht verfügbar
NP74N04YUG-E1-AY |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 75A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Description: MOSFET N-CH 40V 75A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.48 EUR |
NP75N04YUG-E1-AY |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 75A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Description: MOSFET N-CH 40V 75A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.22 EUR |
NP80N06PLG-E1B-AY |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 80A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Description: MOSFET N-CH 60V 80A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Produkt ist nicht verfügbar
NP82N055PUG-E1-AY |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 82A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V
Description: MOSFET N-CH 55V 82A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V
Produkt ist nicht verfügbar
RJK0305DPB-02#J0 |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 30A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V
Description: MOSFET N-CH 30V 30A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V
Produkt ist nicht verfügbar
RJK0451DPB-00#J5 |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 35A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 17.5A, 10V
Power Dissipation (Max): 45W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 10 V
Description: MOSFET N-CH 40V 35A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 17.5A, 10V
Power Dissipation (Max): 45W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 10 V
Produkt ist nicht verfügbar
RJK0452DPB-00#J5 |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 45A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 22.5A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 10 V
Description: MOSFET N-CH 40V 45A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 22.5A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 10 V
auf Bestellung 2240 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.35 EUR |
10+ | 2.98 EUR |
100+ | 2.15 EUR |
500+ | 1.79 EUR |
1000+ | 1.67 EUR |
RJK0454DPB-00#J5 |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 40A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Description: MOSFET N-CH 40V 40A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
auf Bestellung 2220 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.4 EUR |
10+ | 3.01 EUR |
100+ | 2.18 EUR |
500+ | 1.81 EUR |
1000+ | 1.69 EUR |
RJK0455DPB-00#J5 |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 45A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 22.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
Description: MOSFET N-CH 40V 45A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 22.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
auf Bestellung 7490 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.28 EUR |
10+ | 3.56 EUR |
100+ | 2.83 EUR |
500+ | 2.4 EUR |
1000+ | 2.03 EUR |
RJK0456DPB-00#J5 |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 50A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Description: MOSFET N-CH 40V 50A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)RJK0651DPB-00#J5 |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 25A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 12.5A, 10V
Power Dissipation (Max): 45W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 10 V
Description: MOSFET N-CH 60V 25A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 12.5A, 10V
Power Dissipation (Max): 45W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 10 V
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.29 EUR |
10+ | 2.24 EUR |
100+ | 1.6 EUR |
500+ | 1.31 EUR |
1000+ | 1.22 EUR |
RJK0852DPB-00#J5 |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 80V 30A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
Description: MOSFET N-CH 80V 30A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
auf Bestellung 838 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.28 EUR |
10+ | 3.44 EUR |
100+ | 2.39 EUR |
500+ | 1.94 EUR |
RJK0853DPB-00#J5 |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 80V 40A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6170 pF @ 10 V
Description: MOSFET N-CH 80V 40A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6170 pF @ 10 V
auf Bestellung 2450 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 5.98 EUR |
10+ | 3.91 EUR |
100+ | 2.74 EUR |
500+ | 2.24 EUR |
1000+ | 2.08 EUR |
RJK1052DPB-00#J5 |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 20A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4160 pF @ 10 V
Description: MOSFET N-CH 100V 20A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4160 pF @ 10 V
auf Bestellung 4073 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.12 EUR |
10+ | 3.42 EUR |
100+ | 2.73 EUR |
500+ | 2.31 EUR |
1000+ | 1.96 EUR |
RJK1055DPB-00#J5 |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 23A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
Description: MOSFET N-CH 100V 23A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
auf Bestellung 6859 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.49 EUR |
10+ | 3.73 EUR |
100+ | 2.97 EUR |
500+ | 2.51 EUR |
1000+ | 2.13 EUR |
RJK1056DPB-00#J5 |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 25A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 12.5A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Description: MOSFET N-CH 100V 25A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 12.5A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
auf Bestellung 2300 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.77 EUR |
RJK5033DPD-00#J2 |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 500V 6A MP3A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: MP-3A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET N-CH 500V 6A MP3A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: MP-3A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.95 EUR |
RJK6025DPD-00#J2 |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 600V 1A MP3A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 17.5Ohm @ 500mA, 10V
Power Dissipation (Max): 29.7W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: MP-3A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 37.5 pF @ 25 V
Description: MOSFET N-CH 600V 1A MP3A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 17.5Ohm @ 500mA, 10V
Power Dissipation (Max): 29.7W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: MP-3A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 37.5 pF @ 25 V
Produkt ist nicht verfügbar
BCR5AS-12A-T13#B00 |
Hersteller: Renesas Electronics Corporation
Description: TRIAC 600V 5A MP3A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: MP-3A
Part Status: Active
Current - On State (It (RMS)) (Max): 5 A
Voltage - Off State: 600 V
Description: TRIAC 600V 5A MP3A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: MP-3A
Part Status: Active
Current - On State (It (RMS)) (Max): 5 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
ISL95831HRTZ |
Hersteller: Renesas Electronics Corporation
Description: IC REG CONV INTEL 2OUT 48TQFN
Packaging: Tube
Package / Case: 48-WFQFN Exposed Pad
Voltage - Output: 0.25V ~ 1.52V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 4.5V ~ 25V
Operating Temperature: -10°C ~ 100°C
Applications: Converter, Intel IMVP-7, VR12™
Supplier Device Package: 48-TQFN (6x6)
Description: IC REG CONV INTEL 2OUT 48TQFN
Packaging: Tube
Package / Case: 48-WFQFN Exposed Pad
Voltage - Output: 0.25V ~ 1.52V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 4.5V ~ 25V
Operating Temperature: -10°C ~ 100°C
Applications: Converter, Intel IMVP-7, VR12™
Supplier Device Package: 48-TQFN (6x6)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 9.95 EUR |
ISL95831HRTZ-T |
Hersteller: Renesas Electronics Corporation
Description: IC REG CONV INTEL 2OUT 48TQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Voltage - Output: 0.25V ~ 1.52V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 4.5V ~ 25V
Operating Temperature: -10°C ~ 100°C
Applications: Converter, Intel IMVP-7, VR12™
Supplier Device Package: 48-TQFN (6x6)
Description: IC REG CONV INTEL 2OUT 48TQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Voltage - Output: 0.25V ~ 1.52V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 4.5V ~ 25V
Operating Temperature: -10°C ~ 100°C
Applications: Converter, Intel IMVP-7, VR12™
Supplier Device Package: 48-TQFN (6x6)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 9.58 EUR |
ISL9021AIRUFZ-T7A |
Hersteller: Renesas Electronics Corporation
Description: IC REG LINEAR 2.5V 250MA 6UTDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-UTDFN (1.6x1.6)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Voltage Dropout (Max): 0.25V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Soft Start
Description: IC REG LINEAR 2.5V 250MA 6UTDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-UTDFN (1.6x1.6)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Voltage Dropout (Max): 0.25V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Soft Start
Produkt ist nicht verfügbar
ISL95831IRTZ |
Hersteller: Renesas Electronics Corporation
Description: IC REG CONV INTEL 2OUT 48TQFN
Packaging: Tube
Package / Case: 48-WFQFN Exposed Pad
Voltage - Output: 0.25V ~ 1.52V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 4.5V ~ 25V
Operating Temperature: -40°C ~ 85°C
Applications: Converter, Intel IMVP-7, VR12™
Supplier Device Package: 48-TQFN (6x6)
Description: IC REG CONV INTEL 2OUT 48TQFN
Packaging: Tube
Package / Case: 48-WFQFN Exposed Pad
Voltage - Output: 0.25V ~ 1.52V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 4.5V ~ 25V
Operating Temperature: -40°C ~ 85°C
Applications: Converter, Intel IMVP-7, VR12™
Supplier Device Package: 48-TQFN (6x6)
auf Bestellung 860 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 19.25 EUR |
10+ | 17.4 EUR |
25+ | 16.59 EUR |
100+ | 14.4 EUR |
250+ | 13.76 EUR |
500+ | 12.54 EUR |
ISL61863IIRZ |
Hersteller: Renesas Electronics Corporation
Description: IC HOT SWAP CTRLR USB 10DFN
Features: Fault Timeout, Latched Fault, Thermal Limit, Turn On Voltage, UVLO
Packaging: Tube
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Hot Swap Controller
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Applications: USB
Internal Switch(s): Yes
Current - Output (Max): 3.6A
Supplier Device Package: 10-DFN (3x3)
Number of Channels: 2
Current - Supply: 57 µA
Description: IC HOT SWAP CTRLR USB 10DFN
Features: Fault Timeout, Latched Fault, Thermal Limit, Turn On Voltage, UVLO
Packaging: Tube
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Hot Swap Controller
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Applications: USB
Internal Switch(s): Yes
Current - Output (Max): 3.6A
Supplier Device Package: 10-DFN (3x3)
Number of Channels: 2
Current - Supply: 57 µA
Produkt ist nicht verfügbar
TW8831-LB1-CR |
Hersteller: Renesas Electronics Corporation
Description: IC VIDEO LCD CONTROLLER 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Function: Controller
Voltage - Supply: 1.8V, 3.3V
Applications: Consumer Video
Standards: NTSC, PAL, SECAM
Supplier Device Package: 80-LQFP (10x10)
Control Interface: Serial
Description: IC VIDEO LCD CONTROLLER 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Function: Controller
Voltage - Supply: 1.8V, 3.3V
Applications: Consumer Video
Standards: NTSC, PAL, SECAM
Supplier Device Package: 80-LQFP (10x10)
Control Interface: Serial
Produkt ist nicht verfügbar
ISL97687IRTZ |
Hersteller: Renesas Electronics Corporation
Description: IC LED DRVR CTRL PWM 160MA 28QFN
Packaging: Tube
Package / Case: 28-WFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 200kHz ~ 1.2MHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Backlight
Current - Output / Channel: 160mA
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: 28-TQFN (5x5)
Dimming: Analog, PWM
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 32V
Part Status: Active
Description: IC LED DRVR CTRL PWM 160MA 28QFN
Packaging: Tube
Package / Case: 28-WFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 200kHz ~ 1.2MHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Backlight
Current - Output / Channel: 160mA
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: 28-TQFN (5x5)
Dimming: Analog, PWM
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 32V
Part Status: Active
Produkt ist nicht verfügbar
ISL97687IRTZ-T |
Hersteller: Renesas Electronics Corporation
Description: IC LED DRVR CTRL PWM 160MA 28QFN
Packaging: Tape & Reel (TR)
Package / Case: 28-WFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 200kHz ~ 1.2MHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Backlight
Current - Output / Channel: 160mA
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: 28-TQFN (5x5)
Dimming: Analog, PWM
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 32V
Description: IC LED DRVR CTRL PWM 160MA 28QFN
Packaging: Tape & Reel (TR)
Package / Case: 28-WFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 200kHz ~ 1.2MHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Backlight
Current - Output / Channel: 160mA
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: 28-TQFN (5x5)
Dimming: Analog, PWM
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 32V
Produkt ist nicht verfügbar
ISL95831IRTZ-T |
Hersteller: Renesas Electronics Corporation
Description: IC REG CONV INTEL 2OUT 48TQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Voltage - Output: 0.25V ~ 1.52V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 4.5V ~ 25V
Operating Temperature: -40°C ~ 85°C
Applications: Converter, Intel IMVP-7, VR12™
Supplier Device Package: 48-TQFN (6x6)
Description: IC REG CONV INTEL 2OUT 48TQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Voltage - Output: 0.25V ~ 1.52V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 4.5V ~ 25V
Operating Temperature: -40°C ~ 85°C
Applications: Converter, Intel IMVP-7, VR12™
Supplier Device Package: 48-TQFN (6x6)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 10.52 EUR |
ISL95837IRZ |
Hersteller: Renesas Electronics Corporation
Description: IC REG CONV INTEL 2OUT 40QFN
Packaging: Tube
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: Up to 1.52V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Applications: Converter, Intel IMVP-7, VR12™
Supplier Device Package: 40-QFN (5x5)
Description: IC REG CONV INTEL 2OUT 40QFN
Packaging: Tube
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: Up to 1.52V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Applications: Converter, Intel IMVP-7, VR12™
Supplier Device Package: 40-QFN (5x5)
auf Bestellung 1190 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 14.36 EUR |
10+ | 12.97 EUR |
25+ | 12.37 EUR |
100+ | 10.74 EUR |
250+ | 10.26 EUR |
500+ | 9.35 EUR |
1000+ | 8.14 EUR |
TW8832-LB1-CR |
Hersteller: Renesas Electronics Corporation
Description: IC VIDEO LCD CONTROLLER 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Function: Controller
Applications: Consumer Video
Standards: NTSC, PAL, SECAM
Supplier Device Package: 80-LQFP (10x10)
Control Interface: I2C, Serial, SPI
Description: IC VIDEO LCD CONTROLLER 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Function: Controller
Applications: Consumer Video
Standards: NTSC, PAL, SECAM
Supplier Device Package: 80-LQFP (10x10)
Control Interface: I2C, Serial, SPI
Produkt ist nicht verfügbar
TW8832S-LB1-CR |
Hersteller: Renesas Electronics Corporation
Description: IC VIDEO LCD CONTROLLER 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Function: Controller
Applications: Consumer Video
Standards: NTSC, PAL, SECAM
Supplier Device Package: 80-LQFP (10x10)
Control Interface: I2C, Serial, SPI
Description: IC VIDEO LCD CONTROLLER 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Function: Controller
Applications: Consumer Video
Standards: NTSC, PAL, SECAM
Supplier Device Package: 80-LQFP (10x10)
Control Interface: I2C, Serial, SPI
Produkt ist nicht verfügbar
R5F1008CALA#U0 |
Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 32KB FLASH 25LGA
Packaging: Tray
Package / Case: 25-WFLGA
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 6x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: CSI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 25-LGA (3x3)
Number of I/O: 15
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 32KB FLASH 25LGA
Packaging: Tray
Package / Case: 25-WFLGA
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 6x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: CSI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 25-LGA (3x3)
Number of I/O: 15
DigiKey Programmable: Not Verified
auf Bestellung 1470 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.01 EUR |
10+ | 3.61 EUR |
25+ | 3.41 EUR |
80+ | 2.9 EUR |
230+ | 2.72 EUR |
490+ | 2.38 EUR |
980+ | 1.98 EUR |
R5F1008DALA#U0 |
Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 48KB FLASH 25LGA
Packaging: Tray
Package / Case: 25-WFLGA
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 3K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 6x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: CSI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 25-LGA (3x3)
Number of I/O: 15
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 48KB FLASH 25LGA
Packaging: Tray
Package / Case: 25-WFLGA
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 3K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 6x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: CSI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 25-LGA (3x3)
Number of I/O: 15
DigiKey Programmable: Not Verified
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.79 EUR |
10+ | 4.3 EUR |
25+ | 4.07 EUR |
80+ | 3.52 EUR |
230+ | 3.34 EUR |
490+ | 3 EUR |
980+ | 2.53 EUR |