,TO-226_straightlead.jpg "ZVN3320ASTZ")
ZVN3320ASTZ Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 200V 100MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Description: MOSFET N-CH 200V 100MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
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Technische Details ZVN3320ASTZ Diodes Incorporated
Description: MOSFET N-CH 200V 100MA E-LINE, Packaging: Tape & Box (TB), Package / Case: E-Line-3, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V, Power Dissipation (Max): 625mW (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: E-Line (TO-92 compatible), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V.