UPA2802T1L-E2-AY Renesas Electronics America Inc
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 20V 18A 8DFN
Packaging: Bulk
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-DFN3333 (3.3x3.3)
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
Description: MOSFET N-CH 20V 18A 8DFN
Packaging: Bulk
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-DFN3333 (3.3x3.3)
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
auf Bestellung 210000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 232+ | 2.27 EUR |
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Technische Details UPA2802T1L-E2-AY Renesas Electronics America Inc
Description: MOSFET N-CH 20V 18A 8DFN, Packaging: Bulk, Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-DFN3333 (3.3x3.3), Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V.