TSM9926DCS RLG Taiwan Semiconductor
auf Bestellung 542 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details TSM9926DCS RLG Taiwan Semiconductor
Description: MOSFET 2N-CH 20V 6A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.6W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 562pF @ 8V, Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V, Vgs(th) (Max) @ Id: 600mV @ 250µA, Supplier Device Package: 8-SOP.
Weitere Produktangebote TSM9926DCS RLG nach Preis ab 1.22 EUR bis 1.22 EUR
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| TSM9926DCS RLG | Hersteller : Taiwan Semiconductor Co., Ltd. |
Transistor 2xN-Channel MOSFET; 20V; 12V; 40mOhm; 6A; 1,6W; -55°C ~ 150°C; TSM9926DCS RLG TSM9926DCS TTSM9926dcs Anzahl je Verpackung: 25 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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TSM9926DCS RLG | Hersteller : Taiwan Semiconductor |
 Trans MOSFET N-CH 20V 6A 8-Pin SOP T/R |
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TSM9926DCS RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 20V 6A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 562pF @ 8V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA Supplier Device Package: 8-SOP |
Produkt ist nicht verfügbar |
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TSM9926DCS RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 20V 6A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 562pF @ 8V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA Supplier Device Package: 8-SOP |
Produkt ist nicht verfügbar |