Produkte > TAIWAN SEMICONDUCTOR CORPORATION > TSM60NC1R5CP ROG
TSM60NC1R5CP ROG

TSM60NC1R5CP ROG Taiwan Semiconductor Corporation

TSM60NC1R5CP_C2209.pdf Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 3A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 25 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.74 EUR
5000+ 0.71 EUR
Mindestbestellmenge: 2500
Produktrezensionen
Produktbewertung abgeben

Technische Details TSM60NC1R5CP ROG Taiwan Semiconductor Corporation

Description: 600V, 3A, SINGLE N-CHANNEL POWER, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V, Power Dissipation (Max): 55W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 1mA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 25 V.

Weitere Produktangebote TSM60NC1R5CP ROG nach Preis ab 0.79 EUR bis 4.86 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TSM60NC1R5CP ROG TSM60NC1R5CP ROG Hersteller : Taiwan Semiconductor Corporation TSM60NC1R5CP_C2209.pdf Description: 600V, 3A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 25 V
auf Bestellung 10355 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.78 EUR
13+ 1.47 EUR
100+ 1.14 EUR
500+ 0.97 EUR
1000+ 0.79 EUR
Mindestbestellmenge: 10
TSM60NC1R5CP ROG TSM60NC1R5CP ROG Hersteller : Taiwan Semiconductor TSM60NC1R5CP_B2202-2949930.pdf MOSFET 600V, 3A, Single N-Channel Power MOSFET
auf Bestellung 4995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.86 EUR
10+ 4.38 EUR
100+ 3.52 EUR
500+ 2.9 EUR
1000+ 2.39 EUR
2500+ 2.24 EUR
5000+ 2.16 EUR
TSM60NC1R5CP ROG TSM60NC1R5CP ROG Hersteller : Taiwan Semiconductor tsm60nc1r5cp_c2209.pdf Trans MOSFET N-CH 600V 3A 3-Pin(2+Tab) TO-252
Produkt ist nicht verfügbar