TSM60NC165CI C0G Taiwan Semiconductor Corporation

Description: 600V, 24A, SINGLE N-CHANNEL POWE, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: ITO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 300 V.