TSM500P02DCQ Taiwan Semiconductor Corporation
![TSM500P02D_B15.pdf](/images/adobe-acrobat.png)
Description: -20V, -4.7A, DUAL P-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 620mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
FET Feature: Standard
Supplier Device Package: 6-TDFN (2x2)
Part Status: Active
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Technische Details TSM500P02DCQ Taiwan Semiconductor Corporation
Description: -20V, -4.7A, DUAL P-CHANNEL POWE, Packaging: Tape & Reel (TR), Package / Case: 6-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 620mW (Tc), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V, Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V, FET Feature: Standard, Supplier Device Package: 6-TDFN (2x2), Part Status: Active.