TSM500P02DCQ Taiwan Semiconductor Corporation

Description: -20V, -4.7A, DUAL P-CHANNEL POWE, Packaging: Tape & Reel (TR), Package / Case: 6-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 620mW (Tc), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V, Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V, FET Feature: Standard, Supplier Device Package: 6-TDFN (2x2), Part Status: Active.