TSM300NB06LDCR RLG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 5A/24A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Description: MOSFET 2N-CH 60V 5A/24A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.7 EUR |
| 5000+ | 0.67 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TSM300NB06LDCR RLG Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 5A/24A 8PDFNU, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), 40W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V, Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFNU (5x6), Part Status: Active.
Weitere Produktangebote TSM300NB06LDCR RLG nach Preis ab 0.74 EUR bis 3.52 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
TSM300NB06LDCR RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 60V 5A/24A 8PDFNU Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 40W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
TSM300NB06LDCR RLG | Hersteller : Taiwan Semiconductor | MOSFET 60V, 24A, Dual N-Channel Power MOSFET |
auf Bestellung 4490 Stücke: Lieferzeit 10-14 Tag (e) |
|