TSM260P02CX RFG Taiwan Semiconductor
auf Bestellung 13049 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 1.23 EUR |
| 10+ | 0.81 EUR |
| 100+ | 0.53 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.36 EUR |
| 3000+ | 0.28 EUR |
| 9000+ | 0.26 EUR |
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Technische Details TSM260P02CX RFG Taiwan Semiconductor
Description: -20V, -6.5A, SINGLE P-CHANNEL PO, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V, Power Dissipation (Max): 1.56W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V.
Weitere Produktangebote TSM260P02CX RFG nach Preis ab 0.35 EUR bis 1.28 EUR
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TSM260P02CX RFG | Hersteller : Taiwan Semiconductor Corporation |
 Description: -20V, -6.5A, SINGLE P-CHANNEL POPackaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V |
auf Bestellung 3027 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM260P02CX RFG | Hersteller : Taiwan Semiconductor |
Trans MOSFET P-CH 20V 6.5A 3-Pin SOT-23 T/R |
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TSM260P02CX RFG | Hersteller : Taiwan Semiconductor |
Trans MOSFET P-CH 20V 6.5A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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TSM260P02CX RFG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23 Mounting: SMD Kind of package: tape Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 26mΩ Drain current: -4.1A Drain-source voltage: -20V Gate charge: 19.5nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±10V Power dissipation: 1.56W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TSM260P02CX RFG | Hersteller : Taiwan Semiconductor Corporation |
Description: -20V, -6.5A, SINGLE P-CHANNEL PO Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V |
Produkt ist nicht verfügbar |
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TSM260P02CX RFG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23 Mounting: SMD Kind of package: tape Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 26mΩ Drain current: -4.1A Drain-source voltage: -20V Gate charge: 19.5nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±10V Power dissipation: 1.56W |
Produkt ist nicht verfügbar |