TSM085P03CS RLG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: MOSFET P-CHANNEL 30V 34A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V
Power Dissipation (Max): 14W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3216 pF @ 15 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.54 EUR |
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Technische Details TSM085P03CS RLG Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 34A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V, Power Dissipation (Max): 14W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3216 pF @ 15 V.
Weitere Produktangebote TSM085P03CS RLG nach Preis ab 0.63 EUR bis 1.51 EUR
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TSM085P03CS RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 30V 34A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V Power Dissipation (Max): 14W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3216 pF @ 15 V |
auf Bestellung 12375 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM085P03CS RLG | Hersteller : Taiwan Semiconductor |
MOSFETs -30, -34, Single P-Channel |
auf Bestellung 1167 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM085P03CS RLG | Hersteller : Taiwan Semiconductor Co., Ltd. |
Transistor P-Channel MOSFET; 30V; 20V; 14mOhm; 34A; 14W; -55°C ~ 150°C; TSM085P03CS RLG TSM085P03CS TTSM085p03cs Anzahl je Verpackung: 25 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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TSM085P03CS RLG | Hersteller : Taiwan Semiconductor |
Trans MOSFET P-CH 30V 13A 8-Pin SOP T/R |
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TSM085P03CS RLG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.8W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -13A Power dissipation: 2.8W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 56nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TSM085P03CS RLG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.8W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -13A Power dissipation: 2.8W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 56nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |