TSM060NB06CZ C0G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: 60V, 111A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V
Power Dissipation (Max): 2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6842 pF @ 30 V
auf Bestellung 3970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 3.12 EUR |
| 10+ | 2.59 EUR |
| 100+ | 2.06 EUR |
| 500+ | 1.74 EUR |
| 1000+ | 1.48 EUR |
| 2000+ | 1.4 EUR |
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Technische Details TSM060NB06CZ C0G Taiwan Semiconductor Corporation
Description: 60V, 111A, SINGLE N-CHANNEL POWE, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 111A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, Power Dissipation (Max): 2W (Ta), 156W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6842 pF @ 30 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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TSM060NB06CZ C0G | Hersteller : Taiwan Semiconductor |
MOSFET 60V, 111A, Single N-Channel Power MOSFET |
Produkt ist nicht verfügbar |
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| TSM060NB06CZ C0G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 111A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 111A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: THT Gate charge: 103nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |