TSM060N03ECP ROG

TSM060N03ECP ROG Taiwan Semiconductor Corporation


TSM060N03ECP_B1807.pdf Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.51 EUR
Mindestbestellmenge: 2500
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Technische Details TSM060N03ECP ROG Taiwan Semiconductor Corporation

Description: MOSFET N-CHANNEL 30V 70A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, Power Dissipation (Max): 54W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V.

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TSM060N03ECP ROG TSM060N03ECP ROG Hersteller : Taiwan Semiconductor TSM060N03ECP_B1807.pdf MOSFETs 30V, 70A, Single N-Channel Power MOSFET
auf Bestellung 5901 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.33 EUR
10+ 1.17 EUR
100+ 0.92 EUR
500+ 0.77 EUR
1000+ 0.66 EUR
2500+ 0.59 EUR
5000+ 0.52 EUR
Mindestbestellmenge: 3
TSM060N03ECP ROG TSM060N03ECP ROG Hersteller : Taiwan Semiconductor Corporation TSM060N03ECP_B1807.pdf Description: MOSFET N-CHANNEL 30V 70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V
auf Bestellung 6557 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.94 EUR
15+ 1.22 EUR
100+ 0.81 EUR
500+ 0.63 EUR
1000+ 0.57 EUR
Mindestbestellmenge: 10
TSM060N03ECP ROG Hersteller : Taiwan Semiconductor tsm060n03ecp_b1807.pdf Trans MOSFET N-CH 30V 70A 3-Pin(2+Tab) DPAK T/R
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