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TSM019NH04LCR RLG

TSM019NH04LCR RLG Taiwan Semiconductor

TSM019NH04LCR_E2207.pdf Hersteller: Taiwan Semiconductor
MOSFETs 40V, 100A, Single N-Channel Power MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.86 EUR
10+ 4.05 EUR
100+ 3.22 EUR
250+ 3.1 EUR
500+ 2.71 EUR
1000+ 2.31 EUR
2500+ 2.11 EUR
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Technische Details TSM019NH04LCR RLG Taiwan Semiconductor

Description: 40V, 100A, SINGLE N-CHANNEL POWE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-PDFNU (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V.

Weitere Produktangebote TSM019NH04LCR RLG nach Preis ab 2.06 EUR bis 5.91 EUR

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Preis ohne MwSt
TSM019NH04LCR RLG TSM019NH04LCR RLG Hersteller : Taiwan Semiconductor Corporation TSM019NH04LCR_E2207.pdf Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
auf Bestellung 4965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+5.91 EUR
10+ 3.88 EUR
100+ 2.72 EUR
500+ 2.33 EUR
1000+ 2.06 EUR
Mindestbestellmenge: 3
TSM019NH04LCR RLG TSM019NH04LCR RLG Hersteller : Taiwan Semiconductor Corporation TSM019NH04LCR_E2207.pdf Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
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