STWA65N65DM2AG STMicroelectronics
Hersteller: STMicroelectronicsMOSFETs Automotive-grade N-channel 650 V, 42 mOhm typ 60 A MDmesh DM2 Power MOSFET
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 12.46 EUR |
| 10+ | 10.68 EUR |
| 25+ | 10.67 EUR |
| 100+ | 9.59 EUR |
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Technische Details STWA65N65DM2AG STMicroelectronics
Description: MOSFET N-CH 650V 60A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247 Long Leads, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V.
Weitere Produktangebote STWA65N65DM2AG nach Preis ab 8.9 EUR bis 12.87 EUR
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STWA65N65DM2AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 60A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247 Long Leads Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V |
auf Bestellung 597 Stücke: Lieferzeit 10-14 Tag (e) |
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| STWA65N65DM2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 60A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STWA65N65DM2AG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 38A; Idm: 240A Kind of package: tube Application: automotive industry Mounting: THT Drain-source voltage: 650V Drain current: 38A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 446W Polarisation: unipolar Gate charge: 0.12µC Technology: MDmesh™ DM2 Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 240A Case: TO247 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STWA65N65DM2AG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 38A; Idm: 240A Kind of package: tube Application: automotive industry Mounting: THT Drain-source voltage: 650V Drain current: 38A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 446W Polarisation: unipolar Gate charge: 0.12µC Technology: MDmesh™ DM2 Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 240A Case: TO247 |
Produkt ist nicht verfügbar |