STGYA75H120DF2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT TRENCH FS 1200V 150A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 356 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 61ns/366ns
Switching Energy: 4.3mJ (on), 3.9mJ (off)
Test Condition: 600V, 75A, 10Ohm, 15V
Gate Charge: 313 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
auf Bestellung 577 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 18.52 EUR |
| 30+ | 15 EUR |
| 120+ | 14.11 EUR |
| 510+ | 12.79 EUR |
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Technische Details STGYA75H120DF2 STMicroelectronics
Description: IGBT TRENCH FS 1200V 150A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 356 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A, Supplier Device Package: TO-247, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 61ns/366ns, Switching Energy: 4.3mJ (on), 3.9mJ (off), Test Condition: 600V, 75A, 10Ohm, 15V, Gate Charge: 313 nC, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 750 W.
Weitere Produktangebote STGYA75H120DF2 nach Preis ab 12.92 EUR bis 18.73 EUR
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STGYA75H120DF2 | Hersteller : STMicroelectronics |
IGBT Transistors Trench gate field-stop 1200 V, 75 A, high-speed H series IGBT |
auf Bestellung 520 Stücke: Lieferzeit 10-14 Tag (e) |
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STGYA75H120DF2 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGYA75H120DF2 - IGBT, 150 A, 2.1 V, 750 W, 1.2 kV, TO-247LL, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.1V usEccn: EAR99 euEccn: NLR Verlustleistung: 750W Bauform - Transistor: TO-247LL Anzahl der Pins: 3Pin(s) Produktpalette: PW Series Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 150A SVHC: No SVHC (08-Jul-2021) |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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| STGYA75H120DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 150A 750W 3-Pin(3+Tab) Max247 Tube |
Produkt ist nicht verfügbar |
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| STGYA75H120DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 75A; 750W; MAX247 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 300A Type of transistor: IGBT Power dissipation: 750W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 313nC Mounting: THT Case: MAX247 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGYA75H120DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 75A; 750W; MAX247 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 300A Type of transistor: IGBT Power dissipation: 750W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 313nC Mounting: THT Case: MAX247 |
Produkt ist nicht verfügbar |