STGYA50M120DF3 STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT TRENCH FS 1200V 100A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 325 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: MAX247™
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/258ns
Switching Energy: 2mJ (on), 3.2mJ (off)
Test Condition: 600V, 50A, 10Ohm, 15V
Gate Charge: 194 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 535 W
auf Bestellung 599 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 12.6 EUR |
| 30+ | 10.07 EUR |
| 120+ | 9.01 EUR |
| 510+ | 7.95 EUR |
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Technische Details STGYA50M120DF3 STMicroelectronics
Description: IGBT TRENCH FS 1200V 100A MAX247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 325 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A, Supplier Device Package: MAX247™, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 38ns/258ns, Switching Energy: 2mJ (on), 3.2mJ (off), Test Condition: 600V, 50A, 10Ohm, 15V, Gate Charge: 194 nC, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 535 W.
Weitere Produktangebote STGYA50M120DF3 nach Preis ab 9.7 EUR bis 15.75 EUR
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STGYA50M120DF3 | Hersteller : STMicroelectronics |
IGBT Transistors Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT |
auf Bestellung 580 Stücke: Lieferzeit 287-291 Tag (e) |
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STGYA50M120DF3 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 100A 535W 3-Pin(3+Tab) Max247 Tube |
Produkt ist nicht verfügbar |
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| STGYA50M120DF3 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 50A; 535W; MAX247 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 200A Type of transistor: IGBT Power dissipation: 535W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 194nC Mounting: THT Case: MAX247 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGYA50M120DF3 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 50A; 535W; MAX247 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 200A Type of transistor: IGBT Power dissipation: 535W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 194nC Mounting: THT Case: MAX247 |
Produkt ist nicht verfügbar |