STGYA50H120DF2 STMicroelectronics
Hersteller: STMicroelectronicsIGBT Transistors Trench gate field-stop 1200 V 50 A high-speed H series IGBT
auf Bestellung 579 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 8.15 EUR |
| 10+ | 7.37 EUR |
| 30+ | 7.02 EUR |
| 120+ | 6.16 EUR |
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Technische Details STGYA50H120DF2 STMicroelectronics
Description: TRENCH GATE FIELD-STOP, 1200 V,, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 340 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A, Supplier Device Package: TO-247, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 40ns/284ns, Switching Energy: 2mJ (on), 2.1mJ (off), Test Condition: 600V, 50A, 10Ohm, 15V, Gate Charge: 210 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 535 W.
Weitere Produktangebote STGYA50H120DF2 nach Preis ab 7.44 EUR bis 13.48 EUR
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STGYA50H120DF2 | Hersteller : STMicroelectronics |
Description: TRENCH GATE FIELD-STOP, 1200 V, Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 340 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A Supplier Device Package: TO-247 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 40ns/284ns Switching Energy: 2mJ (on), 2.1mJ (off) Test Condition: 600V, 50A, 10Ohm, 15V Gate Charge: 210 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 535 W |
auf Bestellung 608 Stücke: Lieferzeit 10-14 Tag (e) |
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STGYA50H120DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 50A; 535W; MAX247 Kind of package: tube Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 200A Type of transistor: IGBT Power dissipation: 535W Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.21µC Mounting: THT Case: MAX247 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 12 Stücke: Lieferzeit 7-14 Tag (e) |
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STGYA50H120DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 50A; 535W; MAX247 Kind of package: tube Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 200A Type of transistor: IGBT Power dissipation: 535W Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.21µC Mounting: THT Case: MAX247 |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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STGYA50H120DF2 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGYA50H120DF2 - IGBT, 100 A, 2.1 V, 535 W, 1.2 kV, MAX-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.1V usEccn: EAR99 euEccn: NLR Verlustleistung: 535W Bauform - Transistor: MAX-247 Anzahl der Pins: 3Pin(s) Produktpalette: Produktreihe Trench H Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 100A SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 556 Stücke: Lieferzeit 14-21 Tag (e) |
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| STGYA50H120DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 100A 535mW 3-Pin(3+Tab) Max247 Tube |
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