STGWA75M65DF2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: TRENCH GATE FIELD-STOP IGBT M SE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 165 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247 Long Leads
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 47ns/125ns
Switching Energy: 690µJ (on), 2.54mJ (off)
Test Condition: 400V, 75A, 3.3Ohm, 15V
Gate Charge: 225 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 468 W
auf Bestellung 520 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 10.75 EUR |
| 30+ | 8.58 EUR |
| 120+ | 7.67 EUR |
| 510+ | 6.77 EUR |
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Technische Details STGWA75M65DF2 STMicroelectronics
Description: TRENCH GATE FIELD-STOP IGBT M SE, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 165 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A, Supplier Device Package: TO-247 Long Leads, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 47ns/125ns, Switching Energy: 690µJ (on), 2.54mJ (off), Test Condition: 400V, 75A, 3.3Ohm, 15V, Gate Charge: 225 nC, Part Status: Active, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 225 A, Power - Max: 468 W.
Weitere Produktangebote STGWA75M65DF2 nach Preis ab 6.02 EUR bis 35.75 EUR
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STGWA75M65DF2 | Hersteller : STMicroelectronics |
IGBTs Trench gate field-stop IGBT M series, 650 V 75 A low loss |
auf Bestellung 543 Stücke: Lieferzeit 10-14 Tag (e) |
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STGWA75M65DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 468W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 468W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 225nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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STGWA75M65DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 468W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 468W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 225nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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STGWA75M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 120A 468W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STGWA75M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 120A 468W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STGWA75M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 120A 468000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |