STD80N340K6 STMicroelectronics
Hersteller: STMicroelectronics
Description: N-CHANNEL 800 V, 285 MOHM TYP.,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 6A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 400 V
Description: N-CHANNEL 800 V, 285 MOHM TYP.,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 6A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 400 V
auf Bestellung 2494 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.47 EUR |
10+ | 4.59 EUR |
100+ | 3.71 EUR |
500+ | 3.3 EUR |
1000+ | 2.83 EUR |
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Technische Details STD80N340K6 STMicroelectronics
Description: N-CHANNEL 800 V, 285 MOHM TYP.,, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 340mOhm @ 6A, 10V, Power Dissipation (Max): 92W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 400 V.
Weitere Produktangebote STD80N340K6 nach Preis ab 3.15 EUR bis 5.7 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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STD80N340K6 | Hersteller : STMicroelectronics | MOSFET N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET |
auf Bestellung 225 Stücke: Lieferzeit 10-14 Tag (e) |
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STD80N340K6 | Hersteller : STMicroelectronics |
Description: N-CHANNEL 800 V, 285 MOHM TYP., Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 6A, 10V Power Dissipation (Max): 92W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 400 V |
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