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STB8NM60D

STB8NM60D STMicroelectronics

en.CD00079984.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+1.67 EUR
Mindestbestellmenge: 1000
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Technische Details STB8NM60D STMicroelectronics

Description: MOSFET N-CH 600V 8A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V.

Weitere Produktangebote STB8NM60D nach Preis ab 1.62 EUR bis 3.68 EUR

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STB8NM60D STB8NM60D Hersteller : STMicroelectronics en.CD00079984.pdf Description: MOSFET N-CH 600V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
auf Bestellung 1874 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.52 EUR
10+ 2.93 EUR
100+ 2.33 EUR
500+ 1.97 EUR
Mindestbestellmenge: 5
STB8NM60D STB8NM60D Hersteller : STMicroelectronics stb8nm60d-1850360.pdf MOSFET N Ch 600V 0.9Ohm 8A
auf Bestellung 223 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.68 EUR
10+ 3.33 EUR
100+ 2.68 EUR
500+ 2.2 EUR
1000+ 1.8 EUR
2000+ 1.69 EUR
5000+ 1.62 EUR
STB8NM60D Hersteller : STMicroelectronics 1423488368939675cd000.pdf Trans MOSFET N-CH 600V 8A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB8NM60D STB8NM60D Hersteller : STMicroelectronics 1423488368939675cd000.pdf Trans MOSFET N-CH 600V 8A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar