STB80NF55-06T STMicroelectronics
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Technische Details STB80NF55-06T STMicroelectronics
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 55V; 80A; Idm: 320A; 300W; D2PAK, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 55V, Drain current: 80A, Pulsed drain current: 320A, Power dissipation: 300W, Case: D2PAK, Gate-source voltage: ±20V, On-state resistance: 5mΩ, Mounting: SMD, Gate charge: 142nC, Kind of channel: enhanced.
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| STB80NF55-06T | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 80A; Idm: 320A; 300W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 80A Pulsed drain current: 320A Power dissipation: 300W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 142nC Kind of channel: enhanced |
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