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SIHK125N60EF-T1-GE3 Vishay Semiconductors
Hersteller: Vishay Semiconductors
MOSFET N-Channel 40 V (D-S) MOSFET PowerPAK SO-8L, 2.3 mO a. 10V, 3.35 mO a. 4.5V
MOSFET N-Channel 40 V (D-S) MOSFET PowerPAK SO-8L, 2.3 mO a. 10V, 3.35 mO a. 4.5V
auf Bestellung 18050 Stücke:
Lieferzeit 375-379 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.2 EUR |
10+ | 2.89 EUR |
100+ | 2.32 EUR |
500+ | 1.9 EUR |
1000+ | 1.57 EUR |
3000+ | 1.4 EUR |
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Technische Details SIHK125N60EF-T1-GE3 Vishay Semiconductors
Description: E SERIES POWER MOSFET WITH FAST, Packaging: Tape & Reel (TR), Package / Case: 8-PowerBSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V, Power Dissipation (Max): 132W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerPAK®10 x 12, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1863 pF @ 100 V.
Weitere Produktangebote SIHK125N60EF-T1-GE3 nach Preis ab 4.22 EUR bis 8.66 EUR
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SIHK125N60EF-T1GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 132W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK®10 x 12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1863 pF @ 100 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHK125N60EF-T1GE3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 1820 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHK125N60EF-T1GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 132W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK®10 x 12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1863 pF @ 100 V |
auf Bestellung 2050 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHK125N60EF-T1GE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SIHK125N60EF-T1GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 54A; 132W Type of transistor: N-MOSFET Power dissipation: 132W Polarisation: unipolar Kind of package: reel; tape Gate charge: 45nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 54A Mounting: SMD Drain-source voltage: 600V Drain current: 21A On-state resistance: 0.125Ω Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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SIHK125N60EF-T1GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 54A; 132W Type of transistor: N-MOSFET Power dissipation: 132W Polarisation: unipolar Kind of package: reel; tape Gate charge: 45nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 54A Mounting: SMD Drain-source voltage: 600V Drain current: 21A On-state resistance: 0.125Ω |
Produkt ist nicht verfügbar |