SIHK045N60EF-T1-GE3 Vishay Semiconductors
auf Bestellung 9050 Stücke:
Lieferzeit 375-379 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.57 EUR |
| 10+ | 1.4 EUR |
| 100+ | 1.09 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.71 EUR |
| 3000+ | 0.63 EUR |
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Technische Details SIHK045N60EF-T1-GE3 Vishay Semiconductors
Description: E SERIES POWER MOSFET WITH FAST, Packaging: Tape & Reel (TR), Package / Case: 8-PowerBSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 17A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerPAK®10 x 12, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 100 V.
Weitere Produktangebote SIHK045N60EF-T1-GE3 nach Preis ab 8.82 EUR bis 16.6 EUR
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SIHK045N60EF-T1GE3 | Hersteller : Vishay Siliconix |
 Description: E SERIES POWER MOSFET WITH FASTPackaging: Tape & Reel (TR) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 17A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK®10 x 12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 100 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHK045N60EF-T1GE3 | Hersteller : Vishay Semiconductors |
MOSFETs E SERIES POWER MOSFET |
auf Bestellung 4304 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHK045N60EF-T1GE3 | Hersteller : Vishay Siliconix |
Description: E SERIES POWER MOSFET WITH FAST Packaging: Cut Tape (CT) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 17A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK®10 x 12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 100 V |
auf Bestellung 2012 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHK045N60EF-T1GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 47A 9-Pin(8+Tab) PowerPAK T/R |
Produkt ist nicht verfügbar |
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| SIHK045N60EF-T1GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 133A; 278W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Pulsed drain current: 133A Power dissipation: 278W Case: PowerPAK® 1012 Gate-source voltage: ±30V On-state resistance: 52mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHK045N60EF-T1GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 133A; 278W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Pulsed drain current: 133A Power dissipation: 278W Case: PowerPAK® 1012 Gate-source voltage: ±30V On-state resistance: 52mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |