Produkte > VISHAY SILICONIX > SI8417DB-T2-E1
SI8417DB-T2-E1

SI8417DB-T2-E1 Vishay Siliconix


Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 14.5A 6MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 6-MICRO FOOT®CSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 1A, 4.5V
Power Dissipation (Max): 2.9W (Ta), 6.57W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 6 V
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Technische Details SI8417DB-T2-E1 Vishay Siliconix

Description: MOSFET P-CH 12V 14.5A 6MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 6-MICRO FOOT®CSP, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 1A, 4.5V, Power Dissipation (Max): 2.9W (Ta), 6.57W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 6-Micro Foot™ (1.5x1), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 6 V.