SI-E8000-4 Diotec Semiconductor
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 24KV 4A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 4A
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 24000 V
Voltage - Forward (Vf) (Max) @ If: 12 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 24 V
Description: DIODE GEN PURP 24KV 4A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 4A
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 24000 V
Voltage - Forward (Vf) (Max) @ If: 12 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 24 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 377.24 EUR |
2+ | 364.09 EUR |
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Produktbewertung abgeben
Technische Details SI-E8000-4 Diotec Semiconductor
Category: Diodes - others, Description: Diode: rectifying; 24kV; 4A; Ø49x258mm; single diode; 1.5us; bulk, Type of diode: rectifying, Max. off-state voltage: 24kV, Load current: 4A, Case: Ø49x258mm, Mounting: screw type, Semiconductor structure: single diode, Reverse recovery time: 1.5µs, Features of semiconductor devices: cylindrical; high voltage, Max. forward impulse current: 200A, Max. forward voltage: 12V, Kind of package: bulk, Leakage current: 5µA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SI-E8000-4 nach Preis ab 148.03 EUR bis 662.02 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SI-E8000-4 | Hersteller : Diotec Semiconductor | Rectifiers HV Diode, D49x281, 24000V, 4A, 150C |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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SI-E8000-4 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: Diodes - others Description: Diode: rectifying; 24kV; 4A; Ø49x258mm; single diode; 1.5us; bulk Type of diode: rectifying Max. off-state voltage: 24kV Load current: 4A Case: Ø49x258mm Mounting: screw type Semiconductor structure: single diode Reverse recovery time: 1.5µs Features of semiconductor devices: cylindrical; high voltage Max. forward impulse current: 200A Max. forward voltage: 12V Kind of package: bulk Leakage current: 5µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI-E8000-4 | Hersteller : Diotec Semiconductor |
Description: DIODE GEN PURP 24000V 4A - Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 4A Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 24000 V Voltage - Forward (Vf) (Max) @ If: 12 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 24000 V |
Produkt ist nicht verfügbar |
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SI-E8000-4 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: Diodes - others Description: Diode: rectifying; 24kV; 4A; Ø49x258mm; single diode; 1.5us; bulk Type of diode: rectifying Max. off-state voltage: 24kV Load current: 4A Case: Ø49x258mm Mounting: screw type Semiconductor structure: single diode Reverse recovery time: 1.5µs Features of semiconductor devices: cylindrical; high voltage Max. forward impulse current: 200A Max. forward voltage: 12V Kind of package: bulk Leakage current: 5µA |
Produkt ist nicht verfügbar |