SCS312AJTLL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: DIODE SIL CARBIDE 650V 12A LPTL
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
auf Bestellung 849 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 9.73 EUR |
| 10+ | 8.17 EUR |
| 100+ | 6.61 EUR |
| 500+ | 5.87 EUR |
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Technische Details SCS312AJTLL Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 12A LPTL, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 600pF @ 1V, 1MHz, Current - Average Rectified (Io): 12A, Supplier Device Package: LPTL, Operating Temperature - Junction: 175°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V.
Weitere Produktangebote SCS312AJTLL nach Preis ab 4.79 EUR bis 9.82 EUR
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SCS312AJTLL | Hersteller : ROHM Semiconductor |
SiC Schottky Diodes SIC SBD 650V 12A 88W TO-263AB (LPTL) |
auf Bestellung 1872 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS312AJTLL | Hersteller : ROHM |
Description: ROHM - SCS312AJTLL - SiC-Schottky-Diode, Einfach, 650 V, 12 A, 28 nC, TO-263AB tariffCode: 85411000 Bauform - Diode: TO-263AB Kapazitive Gesamtladung: 28nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 12A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C SVHC: Lead (23-Jan-2024) |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCS312AJTLL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; TO263AB; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: TO263AB Max. forward voltage: 1.71V Max. load current: 55A Max. forward impulse current: 350A Leakage current: 240µA Power dissipation: 88W Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SCS312AJTLL | Hersteller : Rohm Semiconductor |
Description: DIODE SIL CARBIDE 650V 12A LPTL Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 600pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: LPTL Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
Produkt ist nicht verfügbar |
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| SCS312AJTLL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; TO263AB; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: TO263AB Max. forward voltage: 1.71V Max. load current: 55A Max. forward impulse current: 350A Leakage current: 240µA Power dissipation: 88W Kind of package: reel; tape |
Produkt ist nicht verfügbar |