SCS304AMC7G ROHM Semiconductor
auf Bestellung 1000 Stücke:
Lieferzeit 120-124 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.82 EUR |
| 10+ | 4.07 EUR |
| 100+ | 3.27 EUR |
| 250+ | 3.1 EUR |
| 500+ | 2.92 EUR |
| 1000+ | 2.46 EUR |
| 2500+ | 2.43 EUR |
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Technische Details SCS304AMC7G ROHM Semiconductor
Description: DIODE SIL CARB 650V 4A TO220FM, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 200pF @ 1V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-220FM, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A, Current - Reverse Leakage @ Vr: 20 µA @ 650 V.
Weitere Produktangebote SCS304AMC7G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SCS304AMC7G | Hersteller : CODIXX AG |
Description: DIODE SIL CARB 650V 4A TO220FM Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 200pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-220FM Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
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