SCS304AGC16 ROHM Semiconductor
auf Bestellung 1000 Stücke:
Lieferzeit 120-124 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 5.21 EUR |
10+ | 4.38 EUR |
100+ | 3.54 EUR |
250+ | 3.34 EUR |
500+ | 3.15 EUR |
1000+ | 2.69 EUR |
2500+ | 2.53 EUR |
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Technische Details SCS304AGC16 ROHM Semiconductor
Description: DIODE SIL CARB 650V 4A TO220ACP, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 200pF @ 1V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-220ACFP, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A, Current - Reverse Leakage @ Vr: 20 µA @ 650 V.
Weitere Produktangebote SCS304AGC16
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SCS304AGC16 | Hersteller : CODIXX AG |
Description: DIODE SIL CARB 650V 4A TO220ACP Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 200pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
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