RS1G150MNTB Rohm Semiconductor
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 291+ | 0.52 EUR |
| 303+ | 0.48 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.42 EUR |
| 2500+ | 0.39 EUR |
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Technische Details RS1G150MNTB Rohm Semiconductor
Description: MOSFET N-CH 40V 15A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 43A (Tc), Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V, Power Dissipation (Max): 3W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 20 V.
Weitere Produktangebote RS1G150MNTB nach Preis ab 0.59 EUR bis 1.52 EUR
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RS1G150MNTB | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 40V 15A 8HSOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 43A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 20 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1G150MNTB | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 40V 15A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 43A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 20 V |
auf Bestellung 5495 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1G150MNTB | Hersteller : ROHM Semiconductor |
MOSFETs 4.5V Drive Nch MOSFET |
auf Bestellung 4502 Stücke: Lieferzeit 10-14 Tag (e) |
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| RS1G150MNTB | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 40V 15A 8-Pin HSOP EP T/R |
Produkt ist nicht verfügbar |
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| RS1G150MNTB | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8 Mounting: SMD Case: HSOP8 Power dissipation: 25W Kind of package: reel; tape Pulsed drain current: 60A Drain-source voltage: 40V Drain current: 43A On-state resistance: 13.3mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RS1G150MNTB | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8 Mounting: SMD Case: HSOP8 Power dissipation: 25W Kind of package: reel; tape Pulsed drain current: 60A Drain-source voltage: 40V Drain current: 43A On-state resistance: 13.3mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |