RRF015P03TL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET P-CH 30V 1.5A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.2 EUR |
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Technische Details RRF015P03TL Rohm Semiconductor
Description: MOSFET P-CH 30V 1.5A TUMT3, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V, Power Dissipation (Max): 320mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TUMT3, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V.
Weitere Produktangebote RRF015P03TL nach Preis ab 0.15 EUR bis 0.77 EUR
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RRF015P03TL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 0.8W; SOT323F Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 0.8W Case: SOT323F Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 3.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1065 Stücke: Lieferzeit 7-14 Tag (e) |
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RRF015P03TL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 0.8W; SOT323F Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 0.8W Case: SOT323F Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 3.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 1065 Stücke: Lieferzeit 14-21 Tag (e) |
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RRF015P03TL | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 30V 1.5A TUMT3 Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TUMT3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V |
auf Bestellung 5205 Stücke: Lieferzeit 10-14 Tag (e) |
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RRF015P03TL | Hersteller : ROHM Semiconductor |
MOSFETs Trans MOSFET P-CH 30V 1.5A |
auf Bestellung 60510 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |