RGP02-16E-T/R EIC SEMICONDUCTOR INC.
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Description: DIODE GEN PURP 1.6KV 500MA DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.28 EUR |
10000+ | 0.26 EUR |
20000+ | 0.23 EUR |
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Technische Details RGP02-16E-T/R EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 1.6KV 500MA DO41, Packaging: Tape & Reel (TR), Package / Case: DO-204AL, DO-41, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 300 ns, Technology: Standard, Capacitance @ Vr, F: 5pF @ 4V, 1MHz, Current - Average Rectified (Io): 500mA, Supplier Device Package: DO-41, Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1600 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA, Current - Reverse Leakage @ Vr: 5 µA @ 1600 V.