R8011KNXC7G

R8011KNXC7G Rohm Semiconductor


datasheet?p=R8011KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 11
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5.5mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
auf Bestellung 1999 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.58 EUR
10+ 4.69 EUR
100+ 3.79 EUR
500+ 3.71 EUR
Mindestbestellmenge: 4
Produktrezensionen
Produktbewertung abgeben

Technische Details R8011KNXC7G Rohm Semiconductor

Description: HIGH-SPEED SWITCHING NCH 800V 11, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V, Power Dissipation (Max): 65W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 5.5mA, Supplier Device Package: TO-220FM, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V.