Produkte > PANJIT SEMICONDUCTOR > PSMB050N10NS2_T0_00601

PSMB050N10NS2_T0_00601 PanJit Semiconductor


Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details PSMB050N10NS2_T0_00601 PanJit Semiconductor

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 120A, Pulsed drain current: 480A, Power dissipation: 138W, Case: TO263, Gate-source voltage: ±20V, On-state resistance: 7mΩ, Mounting: SMD, Gate charge: 53nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.

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PSMB050N10NS2_T0_00601 Hersteller : PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar