PMDPB30XN,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 4A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
Description: MOSFET 2N-CH 20V 4A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.22 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMDPB30XN,115 Nexperia USA Inc.
Description: NEXPERIA - PMDPB30XN,115 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 5.3 A, 5.3 A, 0.032 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 5.3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 20V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 5.3A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.032ohm, Verlustleistung, p-Kanal: 1.17W, Drain-Source-Spannung Vds, n-Kanal: 20V, euEccn: NLR, Bauform - Transistor: SOT-1118, Anzahl der Pins: 8Pins, Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.032ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 1.17W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (27-Jun-2024).
Weitere Produktangebote PMDPB30XN,115 nach Preis ab 0.2 EUR bis 1.04 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt | ||||||||||||||
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PMDPB30XN,115 | Hersteller : Nexperia | Trans MOSFET N-CH 20V 4A 6-Pin HUSON EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDPB30XN,115 | Hersteller : Nexperia | MOSFET PMDPB30XN/SOT1118/HUSON6 |
auf Bestellung 5789 Stücke: Lieferzeit 10-14 Tag (e) |
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PMDPB30XN,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 20V 4A 6HUSON Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 490mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-HUSON (2x2) Part Status: Active |
auf Bestellung 8229 Stücke: Lieferzeit 10-14 Tag (e) |
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PMDPB30XN,115 | Hersteller : NEXPERIA |
Description: NEXPERIA - PMDPB30XN,115 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 5.3 A, 5.3 A, 0.032 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 5.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 5.3A Drain-Source-Durchgangswiderstand, p-Kanal: 0.032ohm Verlustleistung, p-Kanal: 1.17W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOT-1118 Anzahl der Pins: 8Pins Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.032ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.17W Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 245 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDPB30XN,115 | Hersteller : Nexperia | Trans MOSFET N-CH 20V 4A 6-Pin HUSON EP T/R |
Produkt ist nicht verfügbar |
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PMDPB30XN,115 | Hersteller : Nexperia | Trans MOSFET N-CH 20V 4A 6-Pin HUSON EP T/R |
Produkt ist nicht verfügbar |
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PMDPB30XN,115 | Hersteller : Nexperia | Trans MOSFET N-CH 20V 4A 6-Pin HUSON EP T/R |
Produkt ist nicht verfügbar |
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PMDPB30XN,115 | Hersteller : NEXPERIA | Trans MOSFET N-CH 20V 4A 6-Pin HUSON EP T/R |
Produkt ist nicht verfügbar |
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PMDPB30XN,115 | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 12A Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 21.7nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 12A Type of transistor: N-MOSFET x2 Case: DFN2020-6; HUSON6; SOT1118 On-state resistance: 69mΩ Drain current: 2.6A Drain-source voltage: 20V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMDPB30XN,115 | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 12A Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 21.7nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 12A Type of transistor: N-MOSFET x2 Case: DFN2020-6; HUSON6; SOT1118 On-state resistance: 69mΩ Drain current: 2.6A Drain-source voltage: 20V |
Produkt ist nicht verfügbar |