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PCDF0465G1_T0_00601

PCDF0465G1_T0_00601 Panjit


PCDF0465G1-3385767.pdf Hersteller: Panjit
SiC Schottky Diodes 650V/4A Through Hole Silicon Carbide Schottky Barrier Diode
auf Bestellung 2000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.3 EUR
10+ 3.52 EUR
100+ 3.17 EUR
500+ 2.6 EUR
1000+ 2.45 EUR
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Technische Details PCDF0465G1_T0_00601 Panjit

Description: 650V/4A THROUGH HOLE SILICON CAR, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 160pF @ 1V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: ITO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.

Weitere Produktangebote PCDF0465G1_T0_00601 nach Preis ab 2.27 EUR bis 6.64 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PCDF0465G1_T0_00601 PCDF0465G1_T0_00601 Hersteller : Panjit International Inc. PCDF0465G1.pdf Description: 650V/4A THROUGH HOLE SILICON CAR
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.64 EUR
50+ 3.39 EUR
100+ 3.08 EUR
500+ 2.53 EUR
1000+ 2.35 EUR
2000+ 2.27 EUR
Mindestbestellmenge: 3
PCDF0465G1_T0_00601 Hersteller : PanJit Semiconductor PCDF0465G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Max. load current: 20A
Max. forward impulse current: 360A
Leakage current: 40µA
Power dissipation: 53.6W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PCDF0465G1_T0_00601 Hersteller : PanJit Semiconductor PCDF0465G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Max. load current: 20A
Max. forward impulse current: 360A
Leakage current: 40µA
Power dissipation: 53.6W
Kind of package: tube
Produkt ist nicht verfügbar