PBSS5260QA147 NXP USA Inc.
Hersteller: NXP USA Inc.Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: DFN1010D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1.7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 325 mW
Qualification: AEC-Q101
auf Bestellung 280000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3904+ | 0.13 EUR |
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Technische Details PBSS5260QA147 NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 2V, Frequency - Transition: 150MHz, Supplier Device Package: DFN1010D-3, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 1.7 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 325 mW, Qualification: AEC-Q101.