PBSS5160PAPS115 NXP USA Inc.
Hersteller: NXP USA Inc.Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 370mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 550mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 100mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: DFN2020D-6
Grade: Automotive
Qualification: AEC-Q101
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Technische Details PBSS5160PAPS115 NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 PNP, Operating Temperature: 150°C (TJ), Power - Max: 370mW, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 550mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 100mA, 2V, Frequency - Transition: 125MHz, Supplier Device Package: DFN2020D-6, Grade: Automotive, Qualification: AEC-Q101.