![P600M-CT P600M-CT](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/5741/MFG_2721_PX1500M-CT.jpg)
P600M-CT Diotec Semiconductor
![p600a.pdf](/images/adobe-acrobat.png)
Description: DIODE GEN PURP 1KV 6A P600
Packaging: Strip
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details P600M-CT Diotec Semiconductor
Description: DIODE GEN PURP 1KV 6A P600, Packaging: Strip, Package / Case: P600, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.5 µs, Technology: Standard, Current - Average Rectified (Io): 6A, Supplier Device Package: P600, Operating Temperature - Junction: -50°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A, Current - Reverse Leakage @ Vr: 10 µA @ 1 V.