P30FE4SLK-5071 SHINDENGEN
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 30A; Idm: 90A; 44W
Case: FE (TO252AB similar)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Drain-source voltage: 40V
Drain current: 30A
On-state resistance: 8mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 44W
Polarisation: unipolar
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 30A; Idm: 90A; 44W
Case: FE (TO252AB similar)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Drain-source voltage: 40V
Drain current: 30A
On-state resistance: 8mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 44W
Polarisation: unipolar
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Anzahl je Verpackung: 1 Stücke
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Technische Details P30FE4SLK-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 30A; Idm: 90A; 44W, Case: FE (TO252AB similar), Kind of package: reel; tape, Mounting: SMD, Technology: EETMOS3, Drain-source voltage: 40V, Drain current: 30A, On-state resistance: 8mΩ, Type of transistor: N-MOSFET, Application: automotive industry, Power dissipation: 44W, Polarisation: unipolar, Gate charge: 44nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 90A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P30FE4SLK-5071
Foto | Bezeichnung | Hersteller | Beschreibung |
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P30FE4SLK-5071 | Hersteller : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 30A; Idm: 90A; 44W Case: FE (TO252AB similar) Kind of package: reel; tape Mounting: SMD Technology: EETMOS3 Drain-source voltage: 40V Drain current: 30A On-state resistance: 8mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 44W Polarisation: unipolar Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 90A |
Produkt ist nicht verfügbar |