NX3L1G3157GMZ NXP Semiconductors
auf Bestellung 3732 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.78 EUR |
10+ | 0.66 EUR |
100+ | 0.5 EUR |
500+ | 0.39 EUR |
1000+ | 0.3 EUR |
5000+ | 0.26 EUR |
10000+ | 0.24 EUR |
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Technische Details NX3L1G3157GMZ NXP Semiconductors
Description: IC SWITCH SPDT X 1 900MOHM 6XSON, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TA), On-State Resistance (Max): 900mOhm, -3db Bandwidth: 60MHz, Supplier Device Package: 6-XSON, SOT886 (1.45x1), Voltage - Supply, Single (V+): 1.4V ~ 4.3V, Charge Injection: 15pC, Crosstalk: -90dB @ 1MHz, Switch Circuit: SPDT, Multiplexer/Demultiplexer Circuit: 2:1, Channel-to-Channel Matching (ΔRon): 100mOhm, Switch Time (Ton, Toff) (Max): 25ns, 10ns, Channel Capacitance (CS(off), CD(off)): 35pF, Current - Leakage (IS(off)) (Max): 10nA, Number of Circuits: 1, Grade: Automotive, Qualification: AEC-Q100.
Weitere Produktangebote NX3L1G3157GMZ
Foto | Bezeichnung | Hersteller | Beschreibung |
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NX3L1G3157GMZ | Hersteller : NXP Semiconductors | Low-ohmic single-pole double-throw analog switch |
Produkt ist nicht verfügbar |
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NX3L1G3157GMZ | Hersteller : NXP USA Inc. |
Description: IC SWITCH SPDT X 1 900MOHM 6XSON Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 900mOhm -3db Bandwidth: 60MHz Supplier Device Package: 6-XSON, SOT886 (1.45x1) Voltage - Supply, Single (V+): 1.4V ~ 4.3V Charge Injection: 15pC Crosstalk: -90dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 100mOhm Switch Time (Ton, Toff) (Max): 25ns, 10ns Channel Capacitance (CS(off), CD(off)): 35pF Current - Leakage (IS(off)) (Max): 10nA Number of Circuits: 1 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |