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NVMFWS2D3N04XMT1G

NVMFWS2D3N04XMT1G onsemi


NVMFWS2D3N04XM_D-3450184.pdf Hersteller: onsemi
MOSFETs Single N-Channel Power MOSFET 40 V, 121A, 2.35 mohm
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Lieferzeit 10-14 Tag (e)
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2+1.81 EUR
10+ 1.48 EUR
100+ 1.15 EUR
500+ 0.98 EUR
1000+ 0.8 EUR
1500+ 0.75 EUR
3000+ 0.71 EUR
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Technische Details NVMFWS2D3N04XMT1G onsemi

Description: 40V T10M IN S08FL PACKAGE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc), Rds On (Max) @ Id, Vgs: 2.35mOhm @ 20A, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 60µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V, Qualification: AEC-Q101.

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NVMFWS2D3N04XMT1G NVMFWS2D3N04XMT1G Hersteller : onsemi nvmfws2d3n04xm-d.pdf Description: 40V T10M IN S08FL PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 20A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NVMFWS2D3N04XMT1G NVMFWS2D3N04XMT1G Hersteller : onsemi nvmfws2d3n04xm-d.pdf Description: 40V T10M IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 20A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar