NTE627 NTE Electronics, Inc
Hersteller: NTE Electronics, IncDescription: R-SI DUAL 200V 12A 150NS
Packaging: Bag
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 1582 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 3.01 EUR |
| 10+ | 2.85 EUR |
| 20+ | 2.71 EUR |
| 50+ | 2.55 EUR |
| 100+ | 2.5 EUR |
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Technische Details NTE627 NTE Electronics, Inc
Description: R-SI DUAL 200V 12A 150NS, Packaging: Bag, Package / Case: TO-220-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 8A, Supplier Device Package: TO-220, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 6 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V.