NTE588 NTE Electronics, Inc
Hersteller: NTE Electronics, Inc
Description: DIODE GEN PURP 150V 3A DO27
Packaging: Bag
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 155pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GEN PURP 150V 3A DO27
Packaging: Bag
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 155pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
auf Bestellung 4003 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.01 EUR |
10+ | 1.9 EUR |
20+ | 1.81 EUR |
50+ | 1.71 EUR |
100+ | 1.67 EUR |
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Technische Details NTE588 NTE Electronics, Inc
Description: DIODE GEN PURP 150V 3A DO27, Packaging: Bag, Package / Case: DO-201AA, DO-27, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 155pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-27, Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A, Current - Reverse Leakage @ Vr: 5 µA @ 150 V.