NTE5829 NTE Electronics, Inc
Hersteller: NTE Electronics, Inc
Description: DIODE GP 800V 50A PRESS FIT
Packaging: Bag
Package / Case: Press Fit
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Press Fit
Operating Temperature - Junction: -65°C ~ 195°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 800 V
Description: DIODE GP 800V 50A PRESS FIT
Packaging: Bag
Package / Case: Press Fit
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Press Fit
Operating Temperature - Junction: -65°C ~ 195°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 800 V
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 24.69 EUR |
10+ | 23.46 EUR |
20+ | 22.23 EUR |
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Technische Details NTE5829 NTE Electronics, Inc
Description: DIODE GP 800V 50A PRESS FIT, Packaging: Bag, Package / Case: Press Fit, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 50A, Supplier Device Package: Press Fit, Operating Temperature - Junction: -65°C ~ 195°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A, Current - Reverse Leakage @ Vr: 200 µA @ 800 V.