NTE5808 NTE Electronics, Inc
Hersteller: NTE Electronics, IncDescription: DIODE GEN PURP 800V 3A DO27
Packaging: Bag
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9.4 A
Current - Reverse Leakage @ Vr: 500 µA @ 800 V
auf Bestellung 2223 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 1.83 EUR |
| 11+ | 1.74 EUR |
| 20+ | 1.65 EUR |
| 50+ | 1.55 EUR |
| 100+ | 1.51 EUR |
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Technische Details NTE5808 NTE Electronics, Inc
Description: DIODE GEN PURP 800V 3A DO27, Packaging: Bag, Package / Case: DO-201AA, DO-27, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-27, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9.4 A, Current - Reverse Leakage @ Vr: 500 µA @ 800 V.