NTE5334SM NTE Electronics, Inc
Hersteller: NTE Electronics, Inc
Description: R-SI BRIDGE 1KV 1A SMT
Packaging: Bag
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: R-SI BRIDGE 1KV 1A SMT
Packaging: Bag
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 7290 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
40+ | 0.6 EUR |
60+ | 0.57 EUR |
80+ | 0.54 EUR |
100+ | 0.52 EUR |
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Technische Details NTE5334SM NTE Electronics, Inc
Description: R-SI BRIDGE 1KV 1A SMT, Packaging: Bag, Package / Case: 4-SMD, Gull Wing, Mounting Type: Surface Mount, Diode Type: Single Phase, Operating Temperature: -65°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: 4-SMD, Part Status: Active, Voltage - Peak Reverse (Max): 1 kV, Current - Average Rectified (Io): 1 A, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V.