NTE2973 NTE Electronics
Hersteller: NTE ElectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 14A; Idm: 42A; 275W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 14A
Pulsed drain current: 42A
Power dissipation: 275W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.63Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 16.16 EUR |
| 25+ | 15.72 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTE2973 NTE Electronics
Description: MOSFET-N-CHAN ENHANCEMENT TO-3P, Packaging: Bag, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 7A, 10V, Power Dissipation (Max): 275W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V.
Weitere Produktangebote NTE2973 nach Preis ab 16.16 EUR bis 26.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
NTE2973 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 14A; Idm: 42A; 275W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 14A Pulsed drain current: 42A Power dissipation: 275W Case: TO3P Gate-source voltage: ±30V On-state resistance: 0.63Ω Mounting: THT Kind of channel: enhanced |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
NTE2973 | Hersteller : NTE Electronics, Inc |
Description: MOSFET-N-CHAN ENHANCEMENT TO-3P Packaging: Bag Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 7A, 10V Power Dissipation (Max): 275W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V |
auf Bestellung 86 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| NTE2973 | Hersteller : NTE Electronics, Inc. |
Trans MOSFET N-CH 900V 14A 3-Pin(3+Tab) TO-3P |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
|