NTE2932 NTE Electronics, Inc
Hersteller: NTE Electronics, Inc
Description: MOSFET N-CH 200V 21.3A TO3PML
Packaging: Bag
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.3A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10.65A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PML
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Description: MOSFET N-CH 200V 21.3A TO3PML
Packaging: Bag
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.3A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10.65A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PML
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 488 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 13.96 EUR |
10+ | 13.25 EUR |
20+ | 12.57 EUR |
50+ | 11.86 EUR |
100+ | 11.58 EUR |
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Technische Details NTE2932 NTE Electronics, Inc
Description: MOSFET N-CH 200V 21.3A TO3PML, Packaging: Bag, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21.3A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 10.65A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3PML, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V.
Weitere Produktangebote NTE2932
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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NTE2932 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 13.5A; Idm: 130A; 90W; TO3PML Mounting: THT Case: TO3PML Drain-source voltage: 200V Drain current: 13.5A On-state resistance: 85mΩ Type of transistor: N-MOSFET Power dissipation: 90W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 130A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NTE2932 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 13.5A; Idm: 130A; 90W; TO3PML Mounting: THT Case: TO3PML Drain-source voltage: 200V Drain current: 13.5A On-state resistance: 85mΩ Type of transistor: N-MOSFET Power dissipation: 90W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 130A |
Produkt ist nicht verfügbar |